Abstract: In a substrate processing apparatus and a substrate processing method for processing a substrate by a processing fluid in a supercritical state in a processing space in a chamber, a heater for heating inside of the chamber below the substrate is arranged in the chamber, the substrate is carried into the processing space and heating by the heater is performed, the process fluid is supplied into the processing space and discharged from the processing space after the processing space is filled with the processing fluid in the supercritical state. The heating is stopped for a predetermined period from a time of introducing the processing fluid in the supercritical state into the processing space. While keeping inside the chamber a temperature suitable for a super-critical process, a temperature change causing a turbulence can be suppressed and the super-critical process to the substrate can be performed properly.

Abstract: A processing fluid flows into a processing space SP by way of a flow passage and discharge openings 174, 178 having substantially the same cross-sectional shape as that of a gap space formed in a clearance between a wall surface of the processing space SP and a substrate holder 15. On the other hand, the processing fluid having passed through the processing space SP is discharged to an outside via discharge flow passages 183, 187 after flowing into the buffer space 182, 186 having substantially the same width as the gap space. From these, the processing fluid can be caused to flow into the buffer space 182, 186 while the laminar flow state is maintained in the gap space. Thus, the generation of a turbulence in the processing space SP can be suppressed.

Abstract: At least part of a processing liquid upward flowing in a storage space is split into a plurality of upflows and guided to a substrate held by a substrate holder. Many upflows are widely dispersed and formed in the processing liquid stored in the storage space, and the generation of downflows in the storage space is suppressed. As a result, bubbles are uniformly supplied to the substrate and substrate processing can be performed in high quality.

Abstract: The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.

Abstract: A substrate processing method is executed by a substrate processing apparatus. The substrate processing apparatus includes a processing tank, and a bubble supply pipe disposed in the processing tank. In the substrate processing method, a substrate holding section immerses a substrate in an alkaline processing liquid stored in the processing tank. A bubble supply section supplies bubbles to the alkaline processing liquid from below the substrate with the substrate immersed in the alkaline processing liquid, the bubbles being supplied from a plurality of bubble holes provided in the bubble supply pipe.

Abstract: A substrate processing apparatus according to the invention executes a substrate processing using a supercritical processing fluid. In a processing container, a first introduction port is formed in such a manner as to face space over a substrate in the processing space and a second introduction port is formed in such a manner as to face space under a support tray in the processing space. A first discharge port is formed in such a manner as to face space over the support tray and a second discharge port is formed in such a manner as to face the space under the support tray. The supercritical processing fluid having a higher temperature is supplied into the processing space through the first introduction port, and the supercritical processing fluid having a lower temperature is supplied into the processing space through the second introduction port.

Abstract: A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.

Abstract: A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.

Abstract: A processing fluid flows into a processing space SP by way of a flow passage and discharge openings 174, 178 having substantially the same cross-sectional shape as that of a gap space formed in a clearance between a wall surface of the processing space SP and a substrate holder 15. On the other hand, the processing fluid having passed through the processing space SP is discharged to an outside via discharge flow passages 183, 187 after flowing into the buffer space 182, 186 having substantially the same width as the gap space. From these, the processing fluid can be caused to flow into the buffer space 182, 186 while the laminar flow state is maintained in the gap space. Thus, the generation of a turbulence in the processing space SP can be suppressed.

Abstract: The disclosure provides a substrate processing apparatus that processes a surface of a substrate with a processing fluid in a supercritical state, in which the substrate is protected from the pressure fluctuation caused by partial vaporization of the processing fluid in the flow path. A substrate processing apparatus which processes a surface of a substrate with a processing fluid in a supercritical state includes a chamber housing provided therein with a processing space capable of housing the substrate and a flow path which receives the processing fluid from outside and guides the processing fluid to the processing space, and a fluid supply part which pressure-feeds the processing fluid to the flow path, wherein a plurality of bent parts which change a flow direction of the processing fluid are provided in the flow path.

Abstract: A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.