Patents by Inventor Masayuki Shimuta

Masayuki Shimuta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8687404
    Abstract: A memory element capable of increasing capacity with an improvement of distribution of resistance in the high-resistance state, a drive method therefor, and a memory device are provided. The memory element includes first and second electrodes, and a plurality of resistance change elements electrically connected in series between the first and second electrodes, whose resistance values are reversibly changeable in response to application of a voltage to the first and second electrodes, and changeable to the same resistance state relative to the voltage application.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: April 1, 2014
    Assignee: Sony Corporation
    Inventors: Masayuki Shimuta, Jun Sumino, Shuichiro Yasuda
  • Publication number: 20140021434
    Abstract: A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer.
    Type: Application
    Filed: September 16, 2013
    Publication date: January 23, 2014
    Applicant: SONY CORPORATION
    Inventors: Shuichiro Yasuda, Hiroaki Sei, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada
  • Patent number: 8546782
    Abstract: A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: October 1, 2013
    Assignee: Sony Corporation
    Inventors: Shuichiro Yasuda, Hiroaki Sei, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada
  • Publication number: 20130240818
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Application
    Filed: March 18, 2013
    Publication date: September 19, 2013
    Applicant: SONY CORPORATION
    Inventors: KAZUHIRO OHBA, SHUICHIRO YASUDA, TETSUYA MIZUGUCHI, KATSUHISA ARATANI, MASAYUKI SHIMUTA, AKIRA KOUCHIYAMA, MAYUMI OGASAWARA
  • Patent number: 8427860
    Abstract: A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: April 23, 2013
    Assignee: Sony Corporation
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • Publication number: 20130001497
    Abstract: A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.
    Type: Application
    Filed: June 20, 2012
    Publication date: January 3, 2013
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Katsuhisa Aratani
  • Publication number: 20130001496
    Abstract: A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.
    Type: Application
    Filed: June 20, 2012
    Publication date: January 3, 2013
    Applicant: SONY CORPORATION
    Inventors: Masayuki Shimuta, Shuichiro Yasuda, Tetsuya Mizuguchi, Kazuhiro Ohba, Katsuhisa Aratani
  • Publication number: 20120314479
    Abstract: A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer.
    Type: Application
    Filed: June 2, 2012
    Publication date: December 13, 2012
    Applicant: SONY CORPORATION
    Inventors: Tetsuya Mizuguchi, Shuichiro Yasuda, Masayuki Shimuta, Kazuhiro Ohba, Katsuhisa Aratani
  • Publication number: 20120294063
    Abstract: There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less.
    Type: Application
    Filed: February 23, 2012
    Publication date: November 22, 2012
    Applicant: SONY CORPORATION
    Inventors: Tetsuya Mizuguchi, Kazuhiro Ohba, Shuichiro Yasuda, Masayuki Shimuta, Akira Kouchiyama, Hiroaki Sei
  • Publication number: 20120236625
    Abstract: There are provided a memory element and a memory device with improved writing and erasing characteristics during operations at a low voltage and a low current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer, and the barrier layer containing a transition metal or a nitride thereof.
    Type: Application
    Filed: March 9, 2012
    Publication date: September 20, 2012
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Takeyuki Sone, Masayuki Shimuta, Shuichiro Yasuda
  • Publication number: 20120218808
    Abstract: There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 m?cm or higher but lower than 1 ?cm.
    Type: Application
    Filed: February 10, 2012
    Publication date: August 30, 2012
    Applicant: SONY CORPORATION
    Inventors: Shuichiro Yasuda, Tetsuya Mizuguchi, Masayuki Shimuta, Katsuhisa Aratani, Kazuhiro Ohba
  • Publication number: 20120008370
    Abstract: A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer.
    Type: Application
    Filed: June 21, 2011
    Publication date: January 12, 2012
    Applicant: SONY CORPORATION
    Inventors: Shuichiro Yasuda, Hiroaki Sei, Akira Kouchiyama, Masayuki Shimuta, Naomi Yamada
  • Publication number: 20120008369
    Abstract: A memory element capable of increasing capacity with an improvement of distribution of resistance in the high-resistance state, a drive method therefor, and a memory device are provided. The memory element includes first and second electrodes, and a plurality of resistance change elements electrically connected in series between the first and second electrodes, whose resistance values are reversibly changeable in response to application of a voltage to the first and second electrodes, and changeable to the same resistance state relative to the voltage application.
    Type: Application
    Filed: June 21, 2011
    Publication date: January 12, 2012
    Applicant: Sony Corporation
    Inventors: Masayuki Shimuta, Jun Sumino, Shuichiro Yasuda
  • Publication number: 20110194329
    Abstract: A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Application
    Filed: February 1, 2011
    Publication date: August 11, 2011
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara