Abstract: A power supply system for ensuring stable operation of an electronic device such as ICT equipment or the like. The power supply system includes a wide-range DC/DC converter and a charge/discharge unit. The wide-range DC/DC converter outputs, upon input of a DC voltage within a predetermined voltage range, a voltage at one or more kinds of fixed value/values irrespective of the value of the input DC voltage to supply to the electronic device. The charge/discharge unit is connected to an external power source and the wide-range DC/DC converter, and charges/discharges depending on an increase/decrease of an output voltage of the external power source, to thereby stabilize power supplied to the wide-range DC/DC converter.

Abstract: An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 m?·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter.

Abstract: A method includes: a backside-oxidation-film-formation step in which an oxidation film is formed on a backside of a silicon wafer; a backside-oxidation-film-removal step in which the oxidation film provided at an outer periphery of the silicon wafer is removed; an argon-annealing step in which the silicon wafer after the backside-oxidation-film-removal step is subjected to a heat treatment in an argon gas atmosphere at a temperature in a range from 1200 to 1220 degrees C. for 60 minutes or more and 120 minutes or less; and an epitaxial-film-formation step in which an epitaxial film is formed on a surface of the silicon wafer after the argon-annealing step.

Abstract: An epitaxial silicon wafer includes a silicon wafer added with phosphorus so that resistivity of the silicon wafer falls at or below 0.9 m?·cm, an epitaxial film formed on a first side of the silicon wafer, and an oxidation film formed on a second side of the silicon wafer opposite to the first side, wherein an average number of Light Point Defect of a size of 90 nm or more observed on a surface of the epitaxial film is one or less per square centimeter.

Abstract: A method includes: a backside-oxidation-film-formation step in which an oxidation film is formed on a backside of a silicon wafer; a backside-oxidation-film-removal step in which the oxidation film provided at an outer periphery of the silicon wafer is removed; an argon-annealing step in which the silicon wafer after the backside-oxidation-film-removal step is subjected to a heat treatment in an argon gas atmosphere at a temperature in a range from 1200 to 1220 degrees C. for 60 minutes or more and 120 minutes or less; and an epitaxial-film-formation step in which an epitaxial film is formed on a surface of the silicon wafer after the argon-annealing step.

Abstract: A signal processing apparatus according to the present invention includes: a common pre-processing section for performing signal processing common to a photographed image process and a flicker detection process on an input image signal; a photographed image processing section for performing image signal processing for a displayed image on an image signal from the common pre-processing section; a flicker detection pre-processing section for performing image signal processing for flicker detection on the image signal from the common pre-processing section; and a flicker detecting section for performing flicker detection based on the image signal from the flicker detection pre-processing section.

Abstract: A signal processing apparatus according to the present invention includes: a common pre-processing section for performing signal processing common to a photographed image process and a flicker detection process on an input image signal; a photographed image processing section for performing image signal processing for a displayed image on an image signal from the common pre-processing section; a flicker detection pre-processing section for performing image signal processing for flicker detection on the image signal from the common pre-processing section; and a flicker detecting section for performing flicker detection based on the image signal from the flicker detection pre-processing section.

Abstract: An image data serial signal output from the parallel-serial converting circuit 21 is converted into a differential amplitude signal by the LVDS transmitter 22 in such a manner that the amplitude of the differential voltage of the image data parallel signal varies depending on the value of the synchronization code serial signal. Accordingly, the signal values of the synchronization code serial signal and the image data serial signal are simultaneously transmitted. On the reception side, the differential amplitude signal in which the amplitude of the differential voltage of the image data serial signal varies depending on the value of the synchronization code serial signal is received by the LVDS receiver 31. The signal values of the synchronization code serial signal and the image data serial signal are separated and output based on a predetermined comparison processing.

Abstract: An image data serial signal output from the parallel-serial converting circuit 21 is converted into a differential amplitude signal by the LVDS transmitter 22 in such a manner that the amplitude of the differential voltage of the image data parallel signal varies depending on the value of the synchronization code serial signal. Accordingly, the signal values of the synchronization code serial signal and the image data serial signal are simultaneously transmitted. On the reception side, the differential amplitude signal in which the amplitude of the differential voltage of the image data serial signal varies depending on the value of the synchronization code serial signal is received by the LVDS receiver 31. The signal values of the synchronization code serial signal and the image data serial signal are separated and output based on a predetermined comparison processing.

Abstract: A license issuance server capable of performing a function of securely preventing illegalities concerning the granting of licenses to individual machines. In response to an encryption key generation request for software, software encryption key generating means generates a software encryption key and a software decryption key for decrypting the software encrypted by using the software encryption key. In response to a license issue request including device identification information fixedly recorded on a recording medium in a processing device which is a target of permission to run the software, license issuing means encrypts the software decryption key by using the device identification information and outputs a software license including the encrypted software decryption key. Thus, the encrypted software can be decrypted only in the processing device in which the device identification information is fixedly recorded.