Patents by Inventor Masayuki Shirane

Masayuki Shirane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9472707
    Abstract: An infrared detector includes a semiconductor substrate, a first contact layer formed on the semiconductor substrate, a light-absorbing layer formed on the first contact layer, a second contact layer formed on the light-absorbing layer, and a voltage source that applies a voltage between the first contact layer and the second contact layer. The light-absorbing layer includes at least a part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order. The energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: October 18, 2016
    Assignee: NEC Corporation
    Inventors: Masayuki Shirane, Yuichi Igarashi
  • Publication number: 20160218233
    Abstract: An infrared detector includes a semiconductor substrate, a first contact layer formed on the semiconductor substrate, a light-absorbing layer formed on the first contact layer, a second contact layer formed on the light-absorbing layer, and a voltage source that applies a voltage between the first contact layer and the second contact layer. The light-absorbing layer includes at least a part in which a first intermediate layer, a quantum dot layer, a second intermediate layer, a current block layer, a third intermediate layer, and an electron-doped layer are stacked in this order. The energy at a bottom of a conduction band in the current block layer is larger than the energy at a bottom of a conduction band in the intermediate layer and the thickness of the first intermediate layer is larger than the thickness of the third intermediate layer. It is therefore possible to provide an infrared detector having a high signal to noise ratio.
    Type: Application
    Filed: June 6, 2013
    Publication date: July 28, 2016
    Applicant: NEC Corporation
    Inventors: Masayuki SHIRANE, Yuichi IGARASHI
  • Patent number: 7263251
    Abstract: The present invention provides an optical switch having a photonic crystal structure. An optical switch of the invention has a slab optical waveguide structure whose core (35) has a two-dimensional photonic crystal structure where two or more media (33, 34) with different refractive indices are alternately and regularly arranged in a two-dimensional manner. The photonic crystal structure comprises: a line-defect waveguide; and means for altering the refractive index of the line-defect waveguide.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: August 28, 2007
    Assignee: NEC Corporation
    Inventors: Masayuki Shirane, Masatoshi Tokushima
  • Patent number: 7020373
    Abstract: A one-dimensional photonic crystal has a spatial distribution in which the refractive index periodically varies in a first direction that light is caused to be propagated and in which the refractive index is uniform in a second direction perpendicular to the first direction. An antireflective coating structure for the one-dimensional photonic crystal includes a thin-film having a refractive index and a thickness determined by a predetermined calculation method. A two or three-dimensional photonic crystal comprises two or more media that have different refractive indexes and are arranged in a two or three-dimensional pattern. An antireflective coating structure for the two or three-dimensional photonic crystal includes a thin-film comprising one of the media included in the photonic crystal. In the structure, the thin-film is disposed on an end face of the photonic crystal so as to increase the incident efficiency of light entering the photonic crystal.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: March 28, 2006
    Assignee: NEC Corporation
    Inventors: Masayuki Shirane, Jun Ushida
  • Publication number: 20050249455
    Abstract: The present invention provides an optical switch having a photonic crystal structure. An optical switch of the invention has a slab optical waveguide structure whose core (35) has a two-dimensional photonic crystal structure where two or more media (33, 34) with different refractive indices are alternately and regularly arranged in a two-dimensional manner. The photonic crystal structure comprises: a line-defect waveguide; and means for altering the refractive index of the line-defect waveguide.
    Type: Application
    Filed: July 15, 2005
    Publication date: November 10, 2005
    Applicant: NEC CORPORATION
    Inventors: Masayuki Shirane, Masatoshi Tokushima
  • Patent number: 6937781
    Abstract: The present invention provides an optical switch having a photonic crystal structure. An optical switch of the invention has a slab optical waveguide structure whose core (35) has a two-dimensional photonic crystal structure where two or more media (33, 34) with different refractive indices are alternately and regularly arranged in a two-dimensional manner. The photonic crystal structure comprises: a line-defect waveguide; and means for altering the refractive index of the line-defect waveguide.
    Type: Grant
    Filed: March 26, 2002
    Date of Patent: August 30, 2005
    Assignee: NEC Corporation
    Inventors: Masayuki Shirane, Masatoshi Tokushima
  • Publication number: 20030231397
    Abstract: A one-dimensional photonic crystal has a spatial distribution in which the refractive index periodically varies in a first direction that light is caused to be propagated and in which the refractive index is uniform in a second direction perpendicular to the first direction. An antireflective coating structure for the one-dimensional photonic crystal includes a thin-film having a refractive index and a thickness determined by a predetermined calculation method. A two or three-dimensional photonic crystal comprises two or more media that have different refractive indexes and are arranged in a two or three-dimensional pattern. An antireflective coating structure for the two or three-dimensional photonic crystal includes a thin-film comprising one of the media included in the photonic crystal. In the structure, the thin-film is disposed on an end face of the photonic crystal so as to increase the incident efficiency of light entering the photonic crystal.
    Type: Application
    Filed: March 26, 2003
    Publication date: December 18, 2003
    Applicant: NEC Corporation
    Inventors: Masayuki Shirane, Jun Ushida
  • Patent number: 6541951
    Abstract: A method for measuring the waveform of light is provided, which makes it possible to synchronize easily the phase of sampling light with the phase of target light even if the target light is ultra-high speed pulsed light and is transmitted by way of long transmission channel, and to measure the waveform of target light with sufficient time resolution in real time. The method comprises the steps of: (a) generating sampling light having a pulse width sufficiently narrower than that of the target light from the target light; a repetition frequency of the sampling light having a constant difference with respect to a repetition frequency of the target light; (b) supplying the sampling light and the target light to a nonlinear optical member to generate cross-correlated light between the sampling light and the target light; and (c) measuring waveform of the target light based on the cross-correlated light.
    Type: Grant
    Filed: January 11, 2001
    Date of Patent: April 1, 2003
    Assignee: NEC Corporation
    Inventors: Masayuki Shirane, Hiroyuki Yokoyama, Hirohito Yamada, Hisakazu Kurita
  • Publication number: 20020146196
    Abstract: The present invention provides an optical switch having a photonic crystal structure.
    Type: Application
    Filed: March 26, 2002
    Publication date: October 10, 2002
    Applicant: NEC CORPORATION
    Inventors: Masayuki Shirane, Masatoshi Tokushima
  • Publication number: 20020024689
    Abstract: A method for measuring the waveform of light is provided, which makes it possible to synchronize easily the phase of sampling light with the phase of target light even if the target light is ultra-high speed pulsed light and is transmitted by way of long transmission channel, and to measure the waveform of target light with sufficient time resolution in real time. The method comprises the steps of: (a) generating sampling light having a pulse width sufficiently narrower than that of the target light from the target light; a repetition frequency of the sampling light having a constant difference with respect to a repetition frequency of the target light; (b) supplying the sampling light and the target light to a nonlinear optical member to generate cross-correlated light between the sampling light and the target light; and (c) measuring waveform of the target light based on the cross-correlated light.
    Type: Application
    Filed: January 11, 2001
    Publication date: February 28, 2002
    Inventors: Masayuki Shirane, Hiroyuki Yokoyama, Hirohito Yamada, Hisakazu Kurita, Chizuko Kurita