Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.

Abstract: A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.

Abstract: A light-emitting device with a built-in microlens having a microlens integrated with a semiconductor light-emitting device causing no misalignment of an optical axis is provided. This light-emitting device with a built-in microlens comprises a semiconductor light-emitting device and a microlens, integrated with the semiconductor light-emitting device, formed through light emitted from the semiconductor light-emitting device. Thus, the optical axis of the microlens is automatically aligned in formation of the microlens.

Abstract: A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.

Abstract: A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

Abstract: A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.

Abstract: The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (?m) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas: L?0.65 L?2×10?14e31.263De L?6.0317De2?10.352De+5.0516 (De?0.85)2/0.442+(L?0.41)2/0.

Abstract: A light-emitting device with a built-in microlens having a microlens integrated with a semiconductor light-emitting device causing no misalignment of an optical axis is provided. This light-emitting device with a built-in microlens comprises a semiconductor light-emitting device and a microlens, integrated with the semiconductor light-emitting device, formed through light emitted from the semiconductor light-emitting device. Thus, the optical axis of the microlens is automatically aligned in formation of the microlens.

Abstract: A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.

Abstract: A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is removed, to form a ridge portion. A high-resistive current blocking layer, to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion.

Abstract: A six-segment holographic surface is divided into regions by dividing lines. A four-segment photodetection part is divided into four photodetection parts equal in area by a section line substantially parallel to the radial direction of an optical disk and a section line orthogonal thereto. A main light beam diffracted in the regions of the six-segment holographic surface are condensed as spots at positions apart from each other on opposite sides on a section line of the four photodetection parts, and the main beam diffracted in the regions is condensed as spots in the center of the photodetection parts of the four-segment photodetection part.