Abstract: A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.

Abstract: According to one embodiment, a magnetoresistive effect element includes: a nonmagnetic layer; a stacked structure body; and a detection layer. The stacked structure body is provided on the nonmagnetic layer. The stacked structure body includes: a reference layer; an oscillation layer; and an intermediate layer. The reference layer is provided on the nonmagnetic layer. A magnetization of the reference layer is fixed. The oscillation layer is provided on the reference layer. A magnetization of the oscillation layer is substantially parallel to the magnetization of the reference layer and is variable. The intermediate layer is provided between the reference layer and the oscillation layer. The detection layer is provided on the nonmagnetic layer apart from the stacked structure body.

Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, first and second side magnetic units, a stacked body, and a hard bias unit. The first side magnetic unit includes a first soft magnetic layer, a first nonmagnetic intermediate layer, and a second soft magnetic layer. The second side magnetic unit includes a third soft magnetic layer, a second nonmagnetic intermediate layer, and a fourth soft magnetic layer. The stacked body includes a fifth ferromagnetic layer, a third nonmagnetic intermediate layer, and a sixth ferromagnetic layer. The hard bias unit is provided between the first and second shields. A first distance between the first and fifth magnetic layers is shorter than a second distance between the second and sixth magnetic layers. A third distance between the third and fifth magnetic layers is shorter than a fourth distance between the fourth and sixth magnetic layers.

Abstract: An example magnetic recording apparatus includes a magnetic recording medium, a magnetic recording head and a signal processor. The magnetic recording head includes a first magnetic pole; a second magnetic pole; a spin torque oscillator; a first coil to magnetize the first magnetic pole; and a second coil through which a current is passed independently of the first coil. The signal processor writes and reads a signal on the magnetic recording medium by using the magnetic recording head and includes a first current circuit to supply a recording current to the first coil and a second current circuit to supply a modulating current to the second coil.

Abstract: According to one embodiment, a magnetic head includes a reproducing unit to detect a medium magnetic field recorded in a magnetic recording medium. The reproducing unit includes first and second magnetic shields, a stacked body, and a side wall film. The stacked body is provided between the first and second magnetic shields and includes first and second magnetic layer and an intermediate layer provided between them. The stacked body has a side wall. The side wall intersects a plane perpendicular to a stacking direction from the first magnetic shield toward the second magnetic shield. The side wall film covers at least a part of the side wall of the stacked body. The side wall film includes at least one of Fe and Co, and has a composition different from a composition of the first magnetic layer and different from a composition of the second magnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1?x(65 at %?x?85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

Abstract: An example magnetic recording apparatus includes a magnetic recording medium and a magnetic recording head. The magnetic recording head includes a first magnetic pole to apply a recording magnetic field to a magnetic recording medium, a spin torque oscillator provided parallel to the first magnetic pole, a first coil which surrounds the first magnetic pole, to magnetize the first magnetic pole, and a second coil to pass a current independently of the first coil and magnetize the first magnetic pole. A signal processor writes and reads a signal on the magnetic recording medium by using the magnetic recording head.

Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %?x?60 at %, 0.3?y?0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.

Abstract: A magnetoresistive element according to an embodiment includes: a nonmagnetic conductive layer; a first magnetic layer connected to the nonmagnetic conductive layer; a second magnetic layer connected to the nonmagnetic conductive layer so as to be distant from the first magnetic layer; a third magnetic layer connected to the nonmagnetic conductive layer so as be distant from the first magnetic layer; and a first to third magnetic electrodes connected to the first to third magnetic layers respectively; a voltage being applied between the third magnetic electrode and the first magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the first magnetic layer, and a current being caused to flow between the third electrode and the second magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the second magnetic layer, the nonmagnetic conductive layer decreasing in volume toward the one end face.

Abstract: A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.

Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1-x(65 at %?x?85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %?x?60 at %, 0.3?y?0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.

Abstract: According to one embodiment, a magnetoresistance effect element includes a first shield, a second shield, a stacked unit, and a hard bias unit. The stacked unit includes a first magnetic layer provided between the first shield and the second shield, a second magnetic layer provided between the first magnetic layer and the second shield, and an intermediate layer provided between the and second magnetic layers. The hard bias unit is provided between the first shield and the second shield to be arranged with the stacked unit. A crystal orientation plane of the first magnetic layer in a film surface perpendicular direction is a cubic (110) plane. The first magnetic layer includes a first stacked body including a first Fe layer and a first Co layer stacked along the first direction, and a first Heusler alloy layer stacked with the first stacked body along the first direction.

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first shield; a second shield; a first side shield layer; a second side shield layer; a stacked body; a first shield guide layer; and a second shield guide layer. The first shield guide layer includes a fifth magnetic layer provided between the first side shield layer and the stacked body. The second shield guide layer includes a sixth magnetic layer provided between the second side shield layer and the stacked body. A distance between the first side shield layer and the first shield guide layer is shorter than a distance between the stacked body and the first shield guide layer. A distance between the second side shield layer and the second shield guide layer is shorter than a distance between the stacked body and the second shield guide layer.

Abstract: According to one embodiment, a magnetoresistance effect element includes a first shield, a second shield, a stacked unit, and a hard bias unit. The stacked unit includes a first magnetic layer provided between the first shield and the second shield, a second magnetic layer provided between the first magnetic layer and the second shield, and an intermediate layer provided between the and second magnetic layers. The hard bias unit is provided between the first shield and the second shield to be arranged with the stacked unit. A crystal orientation plane of the first magnetic layer in a film surface perpendicular direction is a cubic (110) plane. The first magnetic layer includes a first stacked body including a first Fe layer and a first Co layer stacked along the first direction, and a first Heusler alloy layer stacked with the first stacked body along the first direction.

Abstract: According to one embodiment, a magnetic head includes a magnetoresistive element between a first magnetic shield layer and a second magnetic shield layer, and a hard bias layer between the first magnetic shield layer and the second magnetic shield layer on a side surface of the magnetoresistive element in a first direction intersecting with a second direction which links the first and second magnetic shield layers. The hard bias layer includes Fe or an alloy containing Fe and Co. An aspect ratio (h/w) of the hard bias layer is not smaller than 2, where h is a height of the hard bias layer in the first direction and w is a thickness of the hard bias layer in the second direction.

Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.

Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.