Abstract: The present invention provides a compound substituted with an excellent control effect against a harmful arthropod, which is represented by formula (I) Het-Q??(I) wherein Q represents a group represented by Q1, etc., Het represents a group represented by Het1, etc., R2 represents a C1-C6 alkyl group, etc., G1 represents a nitrogen atom or CR3a, G2 represents a nitrogen atom or CR3b, G3 represents a nitrogen atom or CR3c, G4 represents a nitrogen atom or CR3d, R3a, R3b, R3c, and R3d are identical to or different from each other and represent a C1-C6 chain hydrocarbon group, etc., n represents 0, 1, or 2, T represents a C1-C10 chain hydrocarbon group substituted with one or more halogen atoms, etc., A2 represents a nitrogen atom or CR4a, A3 represents a nitrogen atom or CR4b, R4a and R4b are identical to or different from each other and represent a C1-C6 chain hydrocarbon group, W1 represents an oxygen atom, etc., and R6 represents a C1-C6 chain hydrocarbon group, etc.

Abstract: The present invention provides a compound having an excellent control effect on a harmful arthropod.

Abstract: A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.

Abstract: The present invention provides a compound represented by formula (I) [wherein: Q represents a group represented by Q1 or a group represented by Q2; Z represents an oxygen atom or the like; A2, A3, and A6 each represent a nitrogen atom or the like; A4 represents CR1a or the like; A5 represents a nitrogen atom or the like; A7 represents NR6g or the like; G1, G2, G3, and G4 each represent a nitrogen atom or the like; R1a represents a C1-C6 chain hydrocarbon group substituted with one or more substituent(s) selected from the group consisting of a cyano group and a halogen atom, or the like; R2 represents a C1-C6 alkyl group optionally substituted with one or more halogen atom(s), or the like; and n represents 0, 1, or 2] or an N-oxide thereof having an excellent control effect on a harmful arthropod, and a composition for controlling a harmful arthropod comprising said compound, and a method for controlling a harmful arthropod which comprises applying said compound.

Abstract: A method, a non-transitory computer readable medium, and a system are disclosed for comparing usage of plural printers. The method includes collecting print information on each of a plurality of printers, the print information including print volume, printer run time, printer print time, printer stop time, and raster image processing time; and displaying, on a graphical user interface, a printer usage dashboard, the printer usage dashboard including a line chart of print volume for the plurality of printers, a bar chart of printer stop time for each of the plurality of printers, and a scatter chart of printer usage for the plurality of printers.

Abstract: A method, a non-transitory computer readable medium, and a system are disclosed for comparing usage of plural printers. The method includes collecting print information on each of a plurality of printers, the print information including print volume, printer run time, printer print time, printer stop time, and raster image processing time; and displaying, on a graphical user interface, a printer usage dashboard, the printer usage dashboard including a line chart of print volume for the plurality of printers, a bar chart of printer stop time for each of the plurality of printers, and a scatter chart of printer usage for the plurality of printers.

Abstract: A method, a non-transitory computer readable medium, and a system are disclosed for method securing printed documents from being scanned or copied on a multi-function printer. The method includes collecting user attributes from a user upon accessing the multi-function printer; collecting information from the multi-function printer; extracting information from a printed document being scanned or copied; analyzing the user attributes collected from the user, the information collected from the multi-function printer, and the information extracted from the printed document; and determining whether the user is authorized to execute a scan job or a copy job of the printed document on the multi-function printer based on the information collected from the multi-function printer, and one or more of the user attributes collected from the user, and the information extracted from the printed document.

Abstract: The present invention provides a compound substituted with an excellent control effect against a harmful arthropod, which is represented by formula (I) Het-Q??(I) wherein Q represents a group represented by Q1, etc., Het represents a group represented by Het1, etc., R2 represents a C1-C6 alkyl group, etc., G1 represents a nitrogen atom or CR3a, G2 represents a nitrogen atom or CR3b, G3 represents a nitrogen atom or CR3c, G4 represents a nitrogen atom or CR3d, R3a, R3b, R3c, and R3d are identical to or different from each other and represent a C1-C6 chain hydrocarbon group, etc., n represents 0, 1, or 2, T represents a C1-C10 chain hydrocarbon group substituted with one or more halogen atoms, etc., A2 represents a nitrogen atom or CR4a, A3 represents a nitrogen atom or CR4b, R4a and R4b are identical to or different from each other and represent a C1-C6 chain hydrocarbon group, W1 represents an oxygen atom, etc., and R6 represents a C1-C6 chain hydrocarbon group, etc.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: A disk-shaped GaN substrate has a diameter of 2 inches or more has a front surface tilted with a tilt angle of 45° or more and 135° or less relative to the (0001) plane in a tilt direction within a range of ±5° around the <10-10> direction, and a back surface which is a main surface opposite to the front surface. The GaN substrate has a first point positioned in a direction perpendicular to the c-axis when viewed from the center thereof, on the side surface thereof. A single diffraction peak appears in an X-ray diffraction pattern obtained by ? scan in which an X-ray (CuK?1: wavelength: 0.1542 nm) is incident to the first point and the incident angle ? of the incident X-ray is varied while the 2? angle of the diffracted X-ray is fixed to twice the Bragg angle of 28.99° of the {11-20} plane.

Abstract: A method for producing a GaN crystal is provided. In the method, front surfaces of a plurality of tiling GaN seeds closely arranged side by side on a flat surface of a plate are planarized. An aggregated seed is formed by arranging the tiling GaN seeds closely side by side on a susceptor of an HVPE apparatus in the same arrangement as when fixed on the plate, with the front planarized surfaces facing upward. A bulk GaN crystal is grown epitaxially on the aggregated seed by an HVPE method.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: A non-polar or semi-polar GaN wafer in which a lower-crystallinity band present on a main surface has a reduced width. The GaN wafer includes a first main surface and a second main surface on a side opposite to the first main surface. The first main surface is parallel to or tilted relative to the M-plane. When the tilt, if exists, is decomposed into the a-axis direction component and the c-axis direction component, the a-axis direction component has an absolute value of 5° or less while the c-axis direction component has an absolute value of 45° or less. The GaN wafer includes a lower-crystallinity band extending on the first main surface in a direction perpendicular to the c-axis, and the lower-crystallinity band has a width of less than 190 ?m.

Abstract: A component mounting machine includes a board conveyance device, a component supply device, a component transfer device which includes a mounting head and a head driving mechanism, and a mounting order control device. The component mounting machine partitions a long printed circuit board of a length exceeding a mounting station into a plurality of mounting areas, sequentially positions each mounting area in the mounting station, and mounts the electronic components. The mounting order control device performs control to change the mounting order of the electronic components.

Abstract: A disk-shaped GaN substrate has a diameter of 2 inches or more has a front surface tilted with a tilt angle of 45° or more and 135° or less relative to the (0001) plane in a tilt direction within a range of ±5° around the <10-10> direction, and a back surface which is a main surface opposite to the front surface. The GaN substrate has a first point positioned in a direction perpendicular to the c-axis when viewed from the center thereof, on the side surface thereof. A single diffraction peak appears in an X-ray diffraction pattern obtained by ? scan in which an X-ray (CuK?1: wavelength: 0.1542 nm) is incident to the first point and the incident angle ? of the incident X-ray is varied while the 2? angle of the diffracted X-ray is fixed to twice the Bragg angle of 28.99° of the {11-20} plane.

Abstract: A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

Abstract: A computer displays a first symbol indicating a communication network, displays a second symbol indicating a device group to be displayed from among a first device group that a device belongs to and a second device group that has a higher order than the first device group, and non-displays a symbol indicating a device group that is not a target to be displayed from among the first device group and the second device group. The computer displays a line segment connecting the first symbol and the second symbol.

Abstract: After a display displays a first symbol that represents a first device from among a plurality of devices in a communication network, a processor receives an instruction to display a specific port group from among a plurality of port groups that the first device includes. Then, the display displays a second symbol that represents a first port which is included in the specific port group in a position adjacent to the first symbol, and displays a line segment that indicates a connection relationship between the first port and a second device.

Abstract: A component mounting machine includes a board conveyance device, a component supply device, a component transfer device which includes a mounting head and a head driving mechanism, and a mounting order control device. The component mounting machine partitions a long printed circuit board of a length exceeding a mounting station into a plurality of mounting areas, sequentially positions each mounting area in the mounting station, and mounts the electronic components. The mounting order control device performs control to change the mounting order of the electronic components.