Abstract: A cold-workable mechanical structural steel may include: C: 0.30 to 0.45 mass %; Si: 0.10 to 0.40 mass %; Mn: 0.50 to 1.00 mass %; P: 0.050 mass % or less; S: 0.050 mass % or less; Cr: 0.80 to 1.30 mass %; Al: 0.01 to 0.10 mass %; and a balance of iron and inevitable impurity, the steel having an area percentage of pro-eutectoid ferrite of 10% or larger and 70% or smaller; containing at least one selected from the group consisting of bainite, martensite, and pearlite; and having a dislocation density of 3.5×1014 m?2 or larger.

Abstract: To effectively suppress strong knock that occurs in the operating region of high load and high rotation in a specific engine having a pre-chamber in a combustion chamber, the engine includes a piston that defines a combustion chamber together with a cylinder block and a cylinder head. The combustion chamber includes a sub-chamber and a main chamber separated from the sub-chamber by a pre-chamber. The specific ratio obtained by dividing a bore/stroke ratio of a cylinder by the volume of the sub-chamber is greater than or equal to 6.6 cm?3 and less than or equal to 57.6 cm?3.

Abstract: Provided is an information processing apparatus that is to be connected to a controller apparatus including a push-button, a force sense presentation section, and the push-button. The push-button moves between a first position and a second position when depressed by a finger of a user. The force sense presentation section presents a force sense to the push-button. The information processing apparatus determines, according to a prescribed force sense setting, the aspect of a force sense to be imparted to the push-button, and controls the force sense presentation section of the controller apparatus, according to the determination. Each time a predefined operation is performed, the information processing apparatus changes the force sense setting from a current force sense setting to a different force sense setting.

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and first and second protective films. The first electrode is provided on the semiconductor part. The first protective film is provided on the semiconductor part and covers an outer edge of the first electrode. The second electrode is provided on the first electrode. The second electrode includes an outer edge partially covering the first protective film. The second protective film is provided on the semiconductor part and covers the first protective film and the outer edge of the second electrode.

Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

Abstract: A semiconductor device includes: a first chip including a first electrode; a wiring member; a second chip located between the first chip and the wiring member, including a second electrode; a first conductive plate located on the first electrode, in a second direction a dimension of the first conductive plate being greater than a dimension of the first chip, the second direction crossing a first direction being from the first chip toward the second chip; a second conductive plate located on the second electrode, in a second direction a dimension of the second conductive plate being greater than a dimension of the second chip; and a first wire being bonded to the wiring member, a portion of the first conductive plate protruding further in the second direction than the first chip, and a portion of the second conductive plate protruding further in the second direction than the second chip.

Abstract: An information processing system comprises an input device that holds measurement data and that transmits the measurement data to a recorder; the recorder that receives and records the measurement data transmitted by the input device; and an information processing device that generates, by using a recording result obtained by the recorder and complementary data including missing data corresponding to measurement data that is not included in the recording result obtained by the recorder but that is held by the input device, a new recording result in which the missing data was complemented, wherein the recorder transmits, to the input device, request information for requesting the complementary data, the input device receives the request information transmitted by the recorder and transmits the requested complementary data to the recorder, and the information processing device generates a new recording result by using the complementary data transmitted to the recorder by the input device.

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

Abstract: The present invention relates to hot flash-suppressing agents and menopausal disorder-improving agents and a food and drink and a pharmaceutical preparation for suppressing hot flash, containing ?-lactalbumin as an active ingredient.

Abstract: An electronic device includes a battery for supplying electrical power for operation of the electronic device, an acquisition unit configured to connect to a measuring instrument and acquire measurement data from the measuring instrument, a temperature sensor configured to measure a reference temperature, and a controller configured to correct the measurement data on the basis of the reference temperature. The controller acquires the terminal voltage of the battery and sets a lifespan voltage on the basis of the reference temperature. The lifespan voltage is used as a standard for outputting an alarm encouraging replacement of the battery before the terminal voltage of the battery falls below the voltage necessary for the electronic device to operate. The controller outputs the alarm when the terminal voltage is less than the lifespan voltage.

Abstract: A semiconductor device includes a base, a first semiconductor chip mounted on the base, and a second semiconductor chip provided above the first semiconductor chip. The second semiconductor chip includes a first portion, a second portion including a region directly above a center of the first semiconductor chip, and a third portion including part of a portion of the second semiconductor chip other than a region directly above the first semiconductor chip. The second portion is thicker than the first portion. The third portion is thicker than the second portion and is disposed at a position sandwiching the first semiconductor chip.

Abstract: A chip varistor includes two functional layers (that is, a first functional layer and a second functional layer) inside an element body, and the two functional layers have substantially the same electrostatic capacitance. In the chip varistor, the element body is made highly resistive from an outer surface due to alkali metal containing portion. However, the alkali metal containing portion does not reach the first functional layer and the second functional layer. Therefore, the alkali metal containing portion curbs a parasitic capacitance of the chip varistor without affecting the electrostatic capacitances of the first functional layer and the second functional layer. Accordingly, the chip varistor includes the two functional layers in which variations in capacitance are curbed.

Abstract: A chip varistor includes two functional layers (that is, a first functional layer and a second functional layer) inside an element body, and the two functional layers have substantially the same electrostatic capacitance. In the chip varistor, the element body is made highly resistive from an outer surface due to alkali metal containing portion. However, the alkali metal containing portion does not reach the first functional layer and the second functional layer. Therefore, the alkali metal containing portion curbs a parasitic capacitance of the chip varistor without affecting the electrostatic capacitances of the first functional layer and the second functional layer. Accordingly, the chip varistor includes the two functional layers in which variations in capacitance are curbed.

Abstract: A semiconductor device includes a base including interconnects, a first semiconductor chip including a first semiconductor element portion, and a second semiconductor chip including a second semiconductor element portion. The second semiconductor chip is electrically connected to the first semiconductor chip via at least one of the interconnects. The second semiconductor chip includes a first region, a first portion, and a second portion. The first region includes the second semiconductor element portion. The first portion is continuous with the first region. The second portion is continuous with the first region and is separated from the first portion in a second direction crossing a first direction. The first direction is from the base toward the first region. The second portion, the first portion, and at least a portion of the first semiconductor chip each is positioned between the base and the first region.

Abstract: According to one embodiment, the first end part of the first semiconductor chip in a lower stage protrudes to a larger extent in a first direction than the first end part of the first semiconductor chip in an upper stage. The second end part of the second semiconductor chip in a lower stage protrudes to a larger extent in a second direction opposite from the first direction than the second end part of the second semiconductor chip in an upper stage. The first interlayer semiconductor chip includes a first portion, a second portion, and a third electrode pad. The first portion overlaps the first chip group. The second portion protrudes in the second direction beyond the first chip group and the second chip group and is thicker than the first portion. The third electrode pad is provided on the second portion and bonded with the third metal wire.

Abstract: An electronic device includes a battery for supplying electrical power for operation of the electronic device, an acquisition unit configured to connect to a measuring instrument and acquire measurement data from the measuring instrument, a temperature sensor configured to measure a reference temperature, and a controller configured to correct the measurement data on the basis of the reference temperature. The controller acquires the terminal voltage of the battery and sets a lifespan voltage on the basis of the reference temperature. The lifespan voltage is used as a standard for outputting an alarm encouraging replacement of the battery before the terminal voltage of the battery falls below the voltage necessary for the electronic device to operate. The controller outputs the alarm when the terminal voltage is less than the lifespan voltage.