Abstract: An application server determines a screen layout according to the number of participants in a video conference and a media transmission and reception flow going through all devices used by the participants, and transmits the screen layout and the media transmission and reception flow to each of the plurality of devices, and at least one of the plurality of devices transmits a screen image where an image generated by itself is superimposed in an upper layer of a base layer, which is an image received from a device located previous to itself in the media transmission and reception flow, according to the screen layout by using the Web application received from the application server, to a device located subsequent to itself. This achieves media communication that is two-way and allows connection of many devices only by peer-to-peer communication between devices without through a server that relays media communication.

Abstract: An application server determines a screen layout according to the number of participants in a video conference and a media transmission and reception flow going through all devices used by the participants, and transmits the screen layout and the media transmission and reception flow to each of the plurality of devices, and at least one of the plurality of devices transmits a screen image where an image generated by itself is superimposed in an upper layer of a base layer, which is an image received from a device located previous to itself in the media transmission and reception flow, according to the screen layout by using the Web application received from the application server, to a device located subsequent to itself. This achieves media communication that is two-way and allows connection of many devices only by peer-to-peer communication between devices without through a server that relays media communication.

Abstract: The present disclosure provides an electric power supplying apparatus including: an electric storage device; and a control portion configured to control processing for mixing an output from the electric storage device, and an electric power of an external electric power system with each other in accordance with at least one of a peak shift command, a load electric power, and a remaining capacity of the electric storage device, wherein an alternating current electric power is formed in the mixing processing. When the electric power supplying apparatus further includes an electric power generating apparatus, processing for mixing an output from the electric power generating apparatus, an output from the electric storage device, and an electric power of the external electric power system with one another, is controlled.

Abstract: The present disclosure provides an electric power supplying apparatus including: an electric storage device; and a control portion configured to control processing for mixing an output from the electric storage device, and an electric power of an external electric power system with each other in accordance with at least one of a peak shift command, a load electric power, and a remaining capacity of the electric storage device, wherein an alternating current electric power is formed in the mixing processing. When the electric power supplying apparatus further includes an electric power generating apparatus, processing for mixing an output from the electric power generating apparatus, an output from the electric storage device, and an electric power of the external electric power system with one another, is controlled.

Abstract: To provide a manufacturing method of the semiconductor IC device having fine-structure connecting holes or trenches with high dimensional precision. There is the following step of the operation: a hook-shaped hard mask made of polysilicon film 18 and polysilicon film 20a is formed on the surface of silica film 17 for forming connecting holes 21 accommodating plugs that perform an electrical connection with the lower portion of the lower electrode of the capacitor in the COB-type memory cells, with the hook-shaped hard mask being used as an etching mask in selective etching so as to form connecting holes 21 on silica film 17 and silica film 15 below it.

Abstract: A controlling member (a controlling pin 10) is inserted through an insertion hole 7 of a mold 1 and projected into a cavity 6. After a pipe P as an insert member is arranged at a predetermined position in the cavity 6, the pipe P is held in the cavity 6 by inserting a tip of the controlling pin 10 into a hole h of the pipe P at the end p1, or by inserting the end p1 of the pipe P into a cave 21 of the controlling member. A molten aluminum alloy is then poured through a gate 5 into the cavity 6 under such the condition, to enclose the pipe P with the aluminum alloy. Dislocation of the pipe P caused by kinetic and thermal energies of the poured aluminum alloy is suppressed by the controlling pin 10 or block 20 at the end p1. Since the enclosed pipe P has its end p1 opened at a predetermined position, a cast product obtained in this way can be used as a brake caliper or the like having an inner hydraulic circuit.

Abstract: A key input device according to the present invention includes a key holding unit having an outward shape which can be gripped by one hand and is structured as a separate part which is portable; at least five input keys which are provided on the key holding unit so as to allow separate operation of each of at least five input keys using each finger of one hand; and input units which are provided on the key holding unit in addition to at least five input keys, and which are operated in accordance with movement of the key holding unit; wherein input of characters are executed by combining at least five input keys with the input units. According to the present invention, it is possible to realize a key input device used for portable equipment in which a user can easily grip the key input device and easily execute an input operation of characters with a few operations of pushing buttons using one hand of the user.

Abstract: The invention relates to a method for forming connection holes reliably by making contact resistance low and uniform in semiconductor devices. Insulating layer 3, that includes SOG layer 7, is plasma etched using an etching gas with a small quantity of a gas with a low C/F ratio, such as CHF3, mixed with a gas with a high C/F ratio, such as C4F8/Ar/O2 at a ratio of 1:3.

Abstract: A controlling member (a controlling pin 10) is inserted through an insertion hole 7 of a mold 1 and projected into a cavity 6. After a pipe P as an insert member is arranged at a predetermined position in the cavity 6, the pipe P is held in the cavity 6 by inserting a tip of the controlling pin 10 into a hole h of the pipe P at the end p1, or by inserting the end p1 of the pipe P into a cave 21 of the controlling member. A molten aluminum alloy is then poured through a gate 5 into the cavity 6 under such the condition, to enclose the pipe P with the aluminum alloy. Dislocation of the pipe P caused by kinetic and thermal energies of the poured aluminum alloy is suppressed by the controlling pin 10 or block 20 at the end p1. Since the enclosed pipe P has its end p1 opened at a predetermined position, a cast product obtained in this way can be used as a brake caliper or the like having an inner hydraulic circuit.

Abstract: If cylinder bores formed in a caliper parallel to each other are communicated together through a pipe casted in the caliper, the pipe tends to come out of the caliper into a cylinder bore. A separate short pipe is provided to communicate the cylinder bores. The pipe has an engaging portion so as to extend in a diametric direction of the short pipe to prevent longitudinal shift of the short pipe. The engaging portions can be provided easily by forming a recess or a protrusion on the outer periphery of the pipe and casting the pipe in the caliper.

Abstract: A method for fabricating DRAMs each having a COB structure, and the semiconductor device formed by this method, are provided. In one embodiment, the word line and/or bit line is covered with an insulating film having a comparatively small etching rate. Contact holes are formed while being defined by those insulating films in self-alignment.

Abstract: A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.

Abstract: A heat exchanger comprising an outer tube, one or more inner tubes disposed with interstice within said outer tube, and a spiral element extending longitudinally within said inner tube(s). The spiral element is made up of a plurality of unit elements connected together with a connection angle of 0.degree.. Each of the unit elements has a twist angle of 180.degree., with the direction of twist being reversed from one to a neighboring unit element. Channeling phenomenon is effectively avoided. Heat exchange medium with Rheynolds number Re>10.sup.4 is suitable.