Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract: A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected memory string of the memory device, discharging the boosted channels of the memory cells in the selected memory string, and programming a selected memory cell in the selected memory string after discharging the boosted channels in the selected memory string.

Abstract: Method of operating a memory include programming a memory cell and reading the memory cell to determine a programmed threshold voltage of the memory cell. If the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, the memory cell is reprogrammed, and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, the memory cell is allowed to remain at the programmed threshold voltage.

Abstract: Embodiments of systems and methods described herein relate to temperature compensation of the sense conditions of memory cells during cross temperatures read operations. One embodiment provides a memory device comprising one or more memory cells, a temperature sensor and a controller coupled to the temperature sensor. The temperature sensor measures a temperature of at least one memory cell. The controller modulates a bit line voltage of the at least one memory cell during a program verify or read operation if the read temperature of the at least one memory cell is different from a first temperature of the memory cell.

Abstract: Method of operating a memory include programming a memory cell and reading the memory cell to determine a programmed threshold voltage of the memory cell. If the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, the memory cell is reprogrammed, and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, the memory cell is allowed to remain at the programmed threshold voltage.

Abstract: A method for multiple step programming programs data to an even page of memory cells. The even page of memory cells is read into a page buffer and the uncertain data is removed. An odd page of memory cells is programmed and the data from the even page data from the page buffer is reprogrammed to the even page of memory cells without the uncertain data.

Abstract: Methods for programming and memory devices are disclosed. In one such method for programming, a first programming voltage applied to control gates of a group of memory cells generates a maximum threshold voltage of the group of memory cell threshold voltages. A voltage difference between the maximum threshold voltage and a maximum target voltage is used as a gate step voltage for a second programming voltage. Fast and slow programming memory cells are determined from the distribution resulting from the second programming voltage. An effective gate voltage applied to the control gates of the fast programming memory cells is less than an effective gate voltage applied to the control gates of the slow programming memory cells during the third programming voltage.

Abstract: A method for multiple step programming programs data to an even page of memory cells. The even page of memory cells is read into a page buffer and the uncertain data is removed. An odd page of memory cells is programmed and the data from the even page data from the page buffer is reprogrammed to the even page of memory cells without the uncertain data.

Abstract: Methods for programming, memory devices, and memory systems are disclosed. In one such method for programming, a target memory cell is partially programmed to a final target programmed state where the partial programming is verified by applying a ramped voltage having a first voltage range (e.g., where the first voltage range is selected in response to program coupling effects from memory cells adjacent to the target memory cell.) A programming operation following the partial programming operation is performed on one or more adjacent memory cells which is then followed by additional programming of the target memory cell to adjust the memory cell from the partially programmed state to the final programmed state. A ramped voltage having a second voltage range different from the first voltage range is utilized to verify the programming of the target memory cell to the final programmed state.

Abstract: Methods for programming and memory devices are disclosed. In one such method for programming, a first programming voltage applied to control gates of a group of memory cells generates a maximum threshold voltage of the group of memory cell threshold voltages. A voltage difference between the maximum threshold voltage and a maximum target voltage is used as a gate step voltage for a second programming voltage. Fast and slow programming memory cells are determined from the distribution resulting from the second programming voltage. An effective gate voltage applied to the control gates of the fast programming memory cells is less than an effective gate voltage applied to the control gates of the slow programming memory cells during the third programming voltage.

Abstract: Methods for programming, memory devices, and memory systems are disclosed. In one such method for programming, a target memory cell is partially programmed to a final target programmed state where the partial programming is verified by applying a ramped voltage having a first voltage range (e.g., where the first voltage range is selected in response to program coupling effects from memory cells adjacent to the target memory cell.) A programming operation following the partial programming operation is performed on one or more adjacent memory cells which is then followed by additional programming of the target memory cell to adjust the memory cell from the partially programmed state to the final programmed state. A ramped voltage having a second voltage range different from the first voltage range is utilized to verify the programming of the target memory cell to the final programmed state.

Abstract: Methods for programming, memory devices, and memory systems are disclosed. In one such method for programming, a target memory cell is partially programmed to a final target programmed state where the partial programming is verified by applying a ramped voltage having a first voltage range (e.g., where the first voltage range is selected in response to program coupling effects from memory cells adjacent to the target memory cell.) A programming operation following the partial programming operation is performed on one or more adjacent memory cells which is then followed by additional programming of the target memory cell to adjust the memory cell from the partially programmed state to the final programmed state. A ramped voltage having a second voltage range different from the first voltage range is utilized to verify the programming of the target memory cell to the final programmed state.

Abstract: Methods for programming and memory devices are disclosed. In one such method for programming, a first programming voltage applied to control gates of a group of memory cells generates a maximum threshold voltage of the group of memory cell threshold voltages. A voltage difference between the maximum threshold voltage and a maximum target voltage is used as a gate step voltage for a second programming voltage. Fast and slow programming memory cells are determined from the distribution resulting from the second programming voltage. An effective gate voltage applied to the control gates of the fast programming memory cells is less than an effective gate voltage applied to the control gates of the slow programming memory cells during the third programming voltage.

Abstract: Methods for programming, memory devices, and memory systems are disclosed. In one such method for programming, a target memory cell is partially programmed to a final target programmed state where the partial programming is verified by applying a ramped voltage having a first voltage range (e.g., where the first voltage range is selected in response to program coupling effects from memory cells adjacent to the target memory cell.) A programming operation following the partial programming operation is performed on one or more adjacent memory cells which is then followed by additional programming of the target memory cell to adjust the memory cell from the partially programmed state to the final programmed state. A ramped voltage having a second voltage range different from the first voltage range is utilized to verify the programming of the target memory cell to the final programmed state.

Abstract: A framework that allows a transition from a conventional object method invocation model to a services model, where services are explicitly represented and managed before actually being invoked is described. According to one aspect of the invention, a runtime configurable component-based system is described having a plurality of services. Each service includes a set of properties describing the service. The properties include at least, a set of configuration properties to describe functionalities of the service, a lifecycle property to describe a state transition flow of the service for a specific runtime instance, a state property to describe each state in the lifecycle, and a set of dependency properties to describe inter-dependencies of the service with other services of the plurality of services while within a specific state in the lifecycle.