Abstract: A blocking element is provided for connecting an electronic, micro-mechanical and/or micro-electro-mechanical component, in particular for controlling the propulsion of an electric vehicle. The pin blocking element is formed by a holed body having a first end, a second end and an axial cavity configured for fittingly accommodating a connecting pin. A first flange projects transversely from the holed body at the first end and a second flange projects transversely from the holed body at the second end. The first flange has a greater area than the second flange and is configured to be ultrasonically soldered to a conductive bearing plate to form a power module.

Abstract: A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.

Abstract: The present disclosure relates to an architecture of a device with galvanic optocoupling of the type having at least one optical source and one optical detector, optically connected by means of an insulation layer that functions to transmission optical signals, and having at least one input terminal and one output terminal, the optical source and the optical detector connected to a respective first and second voltage reference. The optical source is realized by a structure integrated directly above the insulation layer in correspondence with the optical detector, the architecture thus completely realized inside a single integration island.

Abstract: The present disclosure relates to an architecture of a device with galvanic optocoupling of the type having at least one optical source and one optical detector, optically connected by means of an insulation layer that functions to transmission optical signals, and having at least one input terminal and one output terminal, the optical source and the optical detector connected to a respective first and second voltage reference. The optical source is realized by a structure integrated directly above the insulation layer in correspondence with the optical detector, the architecture thus completely realized inside a single integration island.

Abstract: A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.