Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

Abstract: A phase change memory element includes a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and is made of a GST alloy. An average percentage of germanium in the GST alloy is higher than 50%. The memory region has a storage portion formed by a GST alloy that includes nitrogen in an electrically relevant amount. The GST alloy of the storage portion has a percentage of germanium inclusively between 60% and 68%; a percentage of antimony inclusively between 9% and 5%; a percentage of tellurium inclusively between 18% and 10%; and a percentage of nitrogen inclusively between 5% and 25%.

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

Abstract: An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

Abstract: An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.

Abstract: A fuse device has a fuse element provided with a first terminal and a second terminal and an electrically breakable region, which is arranged between the first terminal and the second terminal and is configured to undergo breaking as a result of the supply of a programming electrical quantity, thus electrically separating the first terminal from the second terminal. The electrically breakable region is of a phase-change material, in particular a chalcogenic material, for example GST.