Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

Abstract: A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1?0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2?0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3?0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

Abstract: A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1?0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2?0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3?0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.