Patents by Inventor Massimo Ferro

Massimo Ferro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEMS, METHODS AND DEVICES FOR PROGRAMMING A MULTILEVEL RESISTIVE MEMORY CELL
    Publication number: 20160064078
    Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Inventors: Paolo Fantini, Massimo Ferro
  • Methods and apparatuses for programming memory cells
    Patent number: 9263128
    Abstract: Methods and apparatus for programming memory cells in a memory array are disclosed. A most recent programming time is determined, the most recent programming time being a time when a most recent programming operation was applied to a reference memory cell in the memory array. A programming signal is then applied to a target memory cell in the memory array, the programming signal having a programming parameter which depends at least in part on the most recent programming time.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: February 16, 2016
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Paolo Fantini, Massimo Ferro
  • Drift acceleration in resistance variable memory
    Patent number: 9245620
    Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: January 26, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Alessandro Calderoni, Massimo Ferro, Paolo Fantini
  • Methods, articles and devices for pulse adjustments to program a memory cell
    Patent number: 9218876
    Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: December 22, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Alessio Spessot, Paolo Fantini, Massimo Ferro
  • METHODS, DEVICES AND SYSTEMS USING OVER-RESET STATE IN A MEMORY CELL
    Publication number: 20150357038
    Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
    Type: Application
    Filed: August 14, 2015
    Publication date: December 10, 2015
    Inventors: Alessio Spessot, Paolo Fantini, Massimo Ferro
  • Systems, methods and devices for programming a multilevel resistive memory cell
    Patent number: 9183929
    Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: November 10, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Paolo Fantini, Massimo Ferro
  • DRIFT ACCELERATION IN RESISTANCE VARIABLE MEMORY
    Publication number: 20150294718
    Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
    Type: Application
    Filed: June 25, 2015
    Publication date: October 15, 2015
    Inventors: Alessandro Calderoni, Massimo Ferro, Paolo Fantini
  • Methods, devices and systems using over-reset state in a memory cell
    Patent number: 9117519
    Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: August 25, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Alessio Spessot, Paolo Fantini, Massimo Ferro
  • Drift acceleration in resistance variable memory
    Patent number: 9099174
    Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: August 4, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Alessandro Calderoni, Massimo Ferro, Paolo Fantini
  • METHODS AND APPARATUSES FOR PROGRAMMING MEMORY CELLS
    Publication number: 20150213891
    Abstract: Methods and apparatus for programming memory cells in a memory array are disclosed. A most recent programming time is determined, the most recent programming time being a time when a most recent programming operation was applied to a reference memory cell in the memory array. A programming signal is then applied to a target memory cell in the memory array, the programming signal having a programming parameter which depends at least in part on the most recent programming time.
    Type: Application
    Filed: April 6, 2015
    Publication date: July 30, 2015
    Inventors: Paolo Fantini, Massimo Ferro
  • Method and apparatuses for programming memory cells
    Patent number: 9001573
    Abstract: Methods and apparatus for programming memory cells in a memory array are disclosed. A most recent programming time is determined, the most recent programming time being a time when a most recent programming operation was applied to a reference memory cell in the memory array. A programming signal is then applied to a target memory cell in the memory array, the programming signal having a programming parameter which depends at least in part on the most recent programming time.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: April 7, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Paolo Fantini, Massimo Ferro
  • DRIFT ACCELERATION IN RESISTANCE VARIABLE MEMORY
    Publication number: 20140098593
    Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
    Type: Application
    Filed: October 9, 2012
    Publication date: April 10, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Alessandro Calderoni, Massimo Ferro, Paolo Fantini
  • SYSTEMS, METHODS AND DEVICES FOR PROGRAMMING A MULTILEVEL RESISTIVE MEMORY CELL
    Publication number: 20140063898
    Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
    Type: Application
    Filed: August 29, 2012
    Publication date: March 6, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Paolo Fantini, Massimo Ferro
  • METHODS, DEVICES AND SYSTEMS USING OVER-RESET STATE IN A MEMORY CELL
    Publication number: 20140063899
    Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
    Type: Application
    Filed: August 29, 2012
    Publication date: March 6, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Alessio Spessot, Paolo Fantini, Massimo Ferro
  • METHODS, ARTICLES AND DEVICES FOR PULSE ADJUSTMENTS TO PROGRAM A MEMORY CELL
    Publication number: 20130301334
    Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
    Type: Application
    Filed: May 8, 2012
    Publication date: November 14, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Alessio Spessot, Paolo Fantini, Massimo Ferro