Patents by Inventor Massimo M. Pellegrini

Massimo M. Pellegrini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6967547
    Abstract: An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.
    Type: Grant
    Filed: June 24, 2002
    Date of Patent: November 22, 2005
    Assignee: Signal Technology Corporation
    Inventors: Massimo M. Pellegrini, David C. Riffelmacher
  • Publication number: 20030234708
    Abstract: An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.
    Type: Application
    Filed: June 24, 2002
    Publication date: December 25, 2003
    Inventors: Massimo M. Pellegrini, David C. Riffelmacher
  • Patent number: 6429758
    Abstract: The present invention is an RF electromechanical single pole single throw (SPST) switch providing a low loss path for RF signals in closed position and a high impedance path for RF signals in open position. The structure has two reed switches each having an actuator and two contacts with both reed switches electrically connected in parallel and mechanically attached such that one contact in each reed switch is grounded and the another contact connects to the actuators that are also connected together and to an RF input pin.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: August 6, 2002
    Assignee: Renaissance Electronics Corporation
    Inventors: Dean Emelo, Brian Alexander, Massimo M. Pellegrini