Patents by Inventor Massimo Mongillo

Massimo Mongillo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESONATORS
    Publication number: 20220115759
    Abstract: A method for forming a modified resonator is provided. In one aspect, the method includes obtaining a resonator on top of a substrate, thereby forming an interface area between a bottom surface of the resonator and a top surface of the substrate. The resonator can include niobium or tantalum. The method also includes contacting the resonator and the substrate with a liquid acidic etching solution selected so as to have a higher etch rate towards the substrate than towards the resonator and a nonzero etch rate towards the resonator.
    Type: Application
    Filed: October 12, 2021
    Publication date: April 14, 2022
    Inventors: Antoine Pacco, Massimo Mongillo, Anton Potocnik, Danny Wan, Jeroen Verjauw
  • Device and method for forming on a nanowire made of a semiconductor an alloy of this semiconductor with a metal or a metalloid
    Patent number: 9034668
    Abstract: Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: May 19, 2015
    Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Massimo Mongillo, Silvano De Franceschi, Panayotis Spathis
  • DEVICE AND METHOD FOR FORMING ON A NANOWIRE MADE OF A SEMICONDUCTOR AN ALLOY OF THIS SEMICONDUCTOR WITH A METAL OR A METALLOID
    Publication number: 20130203191
    Abstract: Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.
    Type: Application
    Filed: July 13, 2011
    Publication date: August 8, 2013
    Applicant: Commissariat a L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Massimo Mongillo, Silvano De Franceschi, Panayotis Spathis