Abstract: Technology is disclosed related to devices, systems. and methods for detecting a target particle. The device can include a field generator source which emits an incident electromagnetic field: a resonator having a focusing structure to focus the incident electromagnetic field in a gap region that accepts the target particle; and a receiver to detect a resonant signal from the resonator, where the resonant signal shifts due to presence of the target particle in the gap region.

Abstract: Technologies are described for detecting a pathogen. An example system can include a sensor array (118) having a plurality of sensors that include virus sensors (112) which directly detect a whole vims and at least one of a biomarker sensor, antibody sensor, saturated oxygen sensor, temperature sensor, and heart rate sensor (114a-114n). The system also includes executable instructions that receive sensor output from at least a portion of sensors included in the sensor array (118), assign weights to the sensor output of individual sensors in the sensor array based (118) in part on characteristics of the individual sensors to detect the response signature associated with the pathogen, and determine whether the pathogen has been detected based on the weights assigned to the sensor output of the individual sensors. The system can output (124) an indication whether the pathogen has been detected.

Abstract: A method for reducing electrode gap distances in an electronic device having a first electrode spatially separated from a second electrode by an electrode gap can comprise selecting (810) a milometer gap size to bind a biological material based on a size of the biological material and binding effects with the biological material. The method can further comprise coating (820) at least one surface of an electrode gap region with a first layer including molecular recognition groups, and coating (830) the at least one surface with a second layer including electrically-conductive solids that are configured to bond with the molecular recognition groups. The electronic device can be further coated (840) with additional alternating layers of the molecular recognition groups and the electrically-conductive solids to reach the nanometer gap size between a first electrode and a second electrode of the electronic device.

Abstract: A visibly perceived colorimetric pathogen sensor (100) can comprise a substrate (110) and an molecular recognition group (120) coupled to the substrate (110). The molecular recognition group (120) can be operable to bind to a target pathogen (130). Upon the molecular recognition group (120) binding with the target pathogen (130), reflected light can be altered thereby changing apparent color.

Abstract: The present disclosure describes methods of detecting viral biomolecules such as viruses through frequency response. A method (200) of detecting a vims includes exposing (210) a sensor surface to a fluid sample containing a suspected virus. The sensor surface can be a surface of a resonator having a clean resonant frequency from about 1 MHz to about 1 GHz. The surface can be modified with molecular recognition groups selective for binding to the viral biomolecule. A resonant frequency of the resonator can be measured (220) after exposing the sensor surface to the fluid sample. The measured resonant frequency can be compared (230) with a clean resonant frequency indicating the presence of the viral biomolecule bound to the molecular recognition groups and then outputted (240) as a detection signal.

Abstract: A field effect transistor (FET) biosensor for virus detection of a selected virus within a sample volume is disclosed. The FET comprises a semiconductor substrate, a source and drain electrode on the substrate, the electrodes spaced to form a channel. A gate electrode carried on the substrate and located in the channel between the source and drain electrodes. An insulating layer is coupled to a top surface of the gate electrode and a bottom surface of the source and drain electrodes, with an open channel above the insulating layer. A channel material is coupled to the insulating layer. Aptamers are oriented within the open channel to bind to the channel material and with the selected virus to enable a detection of the selected virus by the FET biosensor based on a change in drain-source current at a selected gate voltage.

Abstract: A field effect transistor (FET) biosensor for virus detection of a selected virus within a sample volume is disclosed. The FET comprises a semiconductor substrate, a source and drain electrode on the substrate, the electrodes spaced to form a channel. A gate electrode carried on the substrate and located in the channel between the source and drain electrodes. An insulating layer is coupled to a top surface of the gate electrode and a bottom surface of the source and drain electrodes, with an open channel above the insulating layer. A channel material is coupled to the insulating layer. Aptamers are oriented within the open channel to bind to the channel material and with the selected virus to enable a detection of the selected virus by the FET biosensor based on a change in drain-source current at a selected gate voltage.

Abstract: A field effect transistor (FET) biosensor for virus detection of a selected virus within a sample volume is disclosed. The FET comprises a semiconductor substrate, a source and drain electrode on the substrate, the electrodes spaced to form a channel. A gate electrode carried on the substrate and located in the channel between the source and drain electrodes. An insulating layer is coupled to a top surface of the gate electrode and a bottom surface of the source and drain electrodes, with an open channel above the insulating layer. A channel material is coupled to the insulating layer. Aptamers are oriented within the open channel to bind to the channel material and with the selected virus to enable a detection of the selected virus by the FET biosensor based on a change in drain-source current at a selected gate voltage.

Abstract: A microelectromechanical device is disclosed and described. The microelectromechanical device can include a base having a raised support structure. The microelectromechanical device can also include a biasing electrode supported by the base. The microelectromechanical device can further include a displacement member supported by the raised support structure. The displacement member can have a movable portion extending from the raised support structure and spaced from the biasing electrode by a gap. The movable portion can be movable relative to the base by deflection of the displacement member. The displacement member can also have a piezoelectric material associated with the movable portion. In addition, the microelectromechanical device can include a voltage source electrically coupled to the piezoelectric material and the biasing electrode.

Abstract: A nervous system interface device can include a flexible active layer, a power coil, a communication module, and an antenna. More specifically, the flexible active layer can included a plurality of electrodes that are positioned to take neural measurements of the nervous system. The power coil can be electrically coupled to the flexible active layer and can be configured to receive wireless power from a power transfer device. The communication module can be electrically coupled to the flexible active layer and can be configured to receive power from the power coil. The antenna can also be adapted to wirelessly communicate neural measurement information to another device (e.g. an external computing device, receiver or the like). The nervous system interface device has two functional configurations which include a rolled and an unrolled configuration. In the rolled configuration the nervous system electrode device is rolled along a longitudinal axis for insertion into a hypodermic needle.

Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode.

Abstract: Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.

Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode.

Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, a plasma generation circuit interfaced with the plasma gas enclosure, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having plasma generating electrodes, a second layer having a cavity formed therein, and a third layer having a circuit formed therein. The circuit includes a micro-plasma circuit (MPC) that includes one or more micro-plasma devices (MPDs). A metallic layer covers the MPC except at locations of the MPDs. The first layer is bonded to the second layer and the second layer is bonded to the third layer, thereby forming an enclosure that contains at least one plasma gas.

Abstract: Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.

Abstract: Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.

Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, a plasma generation circuit interfaced with the plasma gas enclosure, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having plasma generating electrodes, a second layer having a cavity formed therein, and a third layer having a circuit formed therein. The circuit includes a micro-plasma circuit (MPC) that includes one or more micro-plasma devices (MPDs). A metallic layer covers the MPC except at locations of the MPDs. The first layer is bonded to the second layer and the second layer is bonded to the third layer, thereby forming an enclosure that contains at least one plasma gas.

Abstract: Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.

Abstract: Nanoelectromechanical devices use a cantilevered beam supported by a base. The cantilevered beam is constructed with a nanoscale gap (e.g., less than 10 nm) separating the cantilevered beam from an electrical structure. A low voltage (e.g., less than 2 volts) applied to the cantilevered beam can cause the beam to bend and make contact with the electrical structure. High switching speeds (e.g., less than 10 ns) can be provided. The electrical structure can be a second cantilevered beam or another structure.

Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, a plasma generation circuit interfaced with the plasma gas enclosure, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having plasma generating electrodes, a second layer having a cavity formed therein, and a third layer having a circuit formed therein. The circuit includes a micro-plasma circuit (MPC) that includes one or more micro-plasma devices (MPDs). A metallic layer covers the MPC except at locations of the MPDs. The first layer is bonded to the second layer and the second layer is bonded to the third layer, thereby forming an enclosure that contains at least one plasma gas.