Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.

Abstract: A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition.

Abstract: This invention relates generally to methods of dehydrating glass substrates for use in photovoltaic modules, suitably by reacting moisture on the glass with organosilicon compounds. The invention also relates to methods of preparing thin film photovoltaic modules, which include dehydration of the glass substrates used in the manufacture of the photovoltaic modules.

Abstract: The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials.

Abstract: A process for purifying methylsilane is described. Methylsilane containing impurities such as carbon dioxide, chlorosilane and atmospheric gases is fed from a source container unit to an adsorption unit at −40° C. The adsorption unit is connected to a collection unit at −190° C. where the purified methylsilane is transported and can be stored.

Abstract: Metal oxide fine powders and thin films prepared by exchange reactions between organosemiconductor oxides (such as disiloxanes) and metal coordination compounds, metallic halides, or organometallic compounds in inert environments and anhydrous solvents.

Abstract: Thin polymeric films, coatings and ionic conductors by cross-linking a polymer matrix, such as a polyethyleneimine, polyetheramine, polyallylamine or polyacrlyamide, with a fluorocarbon containing epoxide or anhydride. The compositions are of high integrity and posses properties, such as insulation, ion conduction, anticorrosion, antifouling and self-adhesion. Specific compositions absorb and release acidic gases and liquids.

Abstract: Thin-film ionic conduction by cross-linking a polymer matrix, such as poly(ethyleneimine), with a halocarbon based diepoxide or divinyl to produce composite compounds with selective ionic conductivity and ion transport properties that can be controlled by the addition of metallic salts or protonic acids.

Abstract: Metal oxides prepared by exchange reactions between organosemiconductor oxides (such as disiloxanes) and metal coordination compounds (such as neutral metal complexes, metal chelates and chlorometalates), metallic halides (such as zinc chloride), or organometallic compounds (such as methylithium) in inert environments and anhydrous solvents.

Abstract: Thin film electrochromic methods and devices which are rigid or flexible and employ moldable solid-state electrolytes formed by combining an organic polymer with an inorganic substance.

Abstract: The invention provides a method for preparing amorphous semiconductors by (a) activating a semiconductane gas using a activator to produce mononuclear, reactive fragments or gaseous condensation products which serve as precursors for the deposition of an amorphous semiconductor; and (b) controlling the temperature of the activator and the flow rate and temperature of the semiconductane gas so that it does not completely decompose upon the activator.

Abstract: Thin film solid state batteries and electrochromic devices are prepared in which one of the electrodes is an electronic organic polymeric material. The counter electrode is an alkali metal ion acceptor and releaser in an appropriate electrolyte containing an alkali metal salt. The counter electrode can also be a non-alkali metal with its salt in the electrolyte. The organic polymer can also be replaced by sulfides, oxides, or selenides. The devices operate at ambient temperatures. The batteries can also be combined with photovoltaic devices to form a single unit which can store solar energy.

Abstract: The method of producing transparent and conductive tin oxide, which comprised the steps of(a) providing a phosphorous fluoride or a non-matallic halocarbon where the halogen consists of fluorine;(b) providing an organotin compound; and(c) applying the combination of said fluoride or said halocarbon and said organotin compound to a substrate in an oxidizing atmosphere.