Abstract: An image processing apparatus includes at least one memory configured to store instructions, and at least one processor configured to execute the instructions to process an image of a target region, and thereby compute a proximity index being an index relating to a proximity state of a plurality of persons captured in the image, and cause a predetermined apparatus to execute predetermined control, when the proximity index satisfies a criterion.

Abstract: A gallium nitride-based semiconductor device includes an amorphous glass substrate having a first surface and a second surface opposite to the first surface; a gallium nitride-based semiconductor layer on the first surface of the amorphous glass substrate, and a compensation layer on the second surface of the amorphous glass substrate. A thermal expansion coefficient of the compensation layer is more than a thermal expansion coefficient of the amorphous glass substrate and less than a thermal expansion coefficient of the gallium nitride-based semiconductor layer.

Abstract: Disclosed is a stacked structure which may include a buffer layer, a first semiconductor layer, and a second semiconductor layer. The buffer layer and the first semiconductor layer are stacked with each other in a vertical direction. The second semiconductor layer is in contact with a side surface of the first semiconductor layer and may surround at least a part of the first semiconductor layer in a plane perpendicular to the vertical direction. Each of the first semiconductor layer and the second semiconductor layer may include a Group III-V material or a Group III nitride material. Crystallinity of the first semiconductor layer may be higher than crystallinity of the second semiconductor layer. The buffer layer may be exposed from the second semiconductor layer in the vertical direction.

Abstract: A display device includes a flexible substrate including a first region including a display region, a second region including a curved region, and a third region including a terminal region; an electro-optical element located in the display region; and a resin layer continuously extending from the first region to the third region.

Abstract: According to one embodiment, a display device includes an insulating substrate, a first insulating layer disposed on the insulating substrate, a lower electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and including an opening overlapping the lower electrode, an organic layer including a light-emitting layer, disposed in the opening and covering the lower electrode, an upper electrode comprising a first end surface, which is an inclined surface, directly above the second insulating layer and stacked on the organic layer and an optical adjustment layer including a second end surface on an inner side with respect to the first end surface and in contact with the upper electrode.

Abstract: In a display device including a flexible display panel, the risk of disconnection of a wiring due to bending is reduced. A display panel includes a display function layer including display elements and a wiring on one major surface of a base material having flexibility. The display panel includes, on the one major surface of the base material, an organic-film-covered wiring area where the surface of the wiring is covered with an organic planarization film that is an organic insulating film in direct contact with the wiring. The display panel includes, in the plane thereof, a display area where the display elements are arranged and a component mounting area that is a peripheral area located outside the display area. As the organic-film-covered wiring area, a curved area is provided in the peripheral area.

Abstract: A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction, over a substrate. Each of the plurality of pixels arranged in a matrix includes a conductive alignment layer over the substrate, a semiconductor layer including gallium nitride over the conductive alignment layer, a light emitting layer in an island shape over the semiconductor layer, and an electrode layer over the light emitting layer. A side surface of the light emitting layer is covered with an insulating layer. A reflective layer facing the side surface of the light emitting layer is provided over the insulating layer.

Abstract: In a display device including a flexible display panel, the risk of disconnection of a wiring due to bending is reduced. A display panel includes a display function layer including display elements and a wiring on one major surface of a base material having flexibility. The display panel includes, on the one major surface of the base material, an organic-film-covered wiring area where the surface of the wiring is covered with an organic planarization film that is an organic insulating film in direct contact with the wiring. The display panel includes, in the plane thereof, a display area where the display elements are arranged and a component mounting area that is a peripheral area located outside the display area. As the organic-film-covered wiring area, a curved area is provided in the peripheral area.

Abstract: A light emitting device includes a substrate, a partition wall defining a plurality of pixels in a matrix over the substrate, a reflective layer covering the partition wall, and an insulating layer covering the reflective layer. Each of the plurality of pixels arranged in a matrix includes a conductive alignment layer over the substrate, a semiconductor layer containing gallium nitride over the conductive alignment layer, a light emitting layer over the semiconductor layer, and an electrode layer over the light emitting layer. A distance from an upper surface of the substrate to an upper surface of the reflective layer in a region overlapping the partition wall is greater than a distance from the upper surface of the substrate to an upper surface of the light emitting layer in a region not overlapping the partition wall.

Abstract: A display device includes a display panel including a display region, a terminal region provided with a terminal, and a bending region located between the display region and the terminal region and capable of bending, the terminal region being located on a rear surface side opposite to a display surface side with respect to the display region based on the bending region bent and a protective coating provided on the display surface side of the bending region. When a direction in which the display region, the bending region, and the terminal region are arranged is defined as a first direction and a direction crossing the first direction is defined as a second direction, the bending region includes a bank portion located in the second direction with respect to the protective coating, projecting to the display surface side, and extending in the first direction.

Abstract: According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region.

Abstract: According to one embodiment, a display device includes a lower electrode arranged on a first insulating layer, a second insulating layer arranged on the first insulating layer, having an opening overlapping the lower electrode, and being in a lattice form, a feed line arranged on the second insulating layer, having a first line portion, a second line portion, and a third line portion being continuous with the first and second line portions and having a different width from the first and second line portions, an organic layer arranged in the opening and covering the lower electrode, and an upper electrode being in contact with the first, second and third line portions, and covering the organic layer.

Abstract: A stacked structure includes an amorphous substrate, a buffer layer on the amorphous substrate, and a gallium nitride-based semiconductor layer on the buffer layer. The gallium nitride-based semiconductor layer includes at least one gallium nitride layer, and an oxygen concentration of the gallium nitride layer is less than 1×1021/cm3.

Abstract: A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction. Each of the plurality of pixels includes an amorphous substrate, a semi-transparent reflective layer over the amorphous substrate, a first insulating alignment layer over the semi-transparent reflective layer, a first semiconductor layer over the first insulating alignment layer, a light emitting layer over the first semiconductor layer, a second semiconductor layer over the light emitting layer, and an electrode layer over the second semiconductor layer. Each of the first semiconductor layer, the light emitting layer, and the second semiconductor layer includes gallium nitride.

Abstract: A display device includes a transistor on a first region of an amorphous substrate and an LED on a second region different from the first region of the amorphous substrate. Each of the transistor and the LED includes a conductive alignment layer, a first semiconductor layer over the conductive alignment layer, and a second semiconductor layer over the first semiconductor layer. The conductive alignment layer, the first semiconductor layer, and the second semiconductor layer of the transistor are the same layer as the conductive alignment layer, the first semiconductor layer, and the second semiconductor layer of the LED, respectively. In the transistor, the first semiconductor layer is in contact with the second semiconductor layer. In the LED, a light emitting layer is provided between the first semiconductor layer and the second semiconductor layer.

Abstract: A light emitting device includes a plurality of pixels arranged in a matrix in a first direction and in a second direction orthogonal to the first direction. Each of the plurality of pixels arranged in a matrix includes a substrate, a conductive alignment layer over the substrate, a first nitride semiconductor layer over the conductive alignment layer, a second nitride semiconductor layer comprising a light emitting layer, over the first nitride semiconductor layer, and an electrode layer over the second nitride semiconductor layer. The first nitride semiconductor layer and the second nitride semiconductor layer are provided in an island shape. The plurality of pixels arranged in a matrix commonly includes the substrate.

Abstract: A transistor according to an embodiment of the present invention includes an amorphous substrate, a conductive alignment layer over the amorphous substrate, a heterojunction structure including a semiconductor layer and a polarization layer in contact with the semiconductor layer over the conductive alignment layer, and a gate electrode over the heterojunction structure. The heterojunction structure comprises a recessed portion in a region overlapping the gate electrode. The recessed portion may be provided in the polarization layer or the semiconductor layer.

Abstract: According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region.

Abstract: A gallium nitride-based semiconductor device includes an amorphous substrate, a conductive alignment layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the conductive alignment layer, and an auxiliary electrode layer in contact with the conductive alignment layer. The auxiliary electrode layer is arranged around a periphery portion of the conductive alignment layer.

Abstract: A semiconductor device using a gallium nitride layer has an amorphous glass substrate, an oriented insulating layer arranged on the amorphous glass substrate and having a crystal orientation, a first gallium nitride layer arranged on the oriented insulating layer and in contact with the oriented insulating layer, the first gallium nitride layer being a first conductivity type, a gate electrode opposed to the first gallium nitride layer, and a gate insulating layer between the first gallium nitride layer and the gate electrode. The oriented insulating layer may have a plane with 6-fold rotational symmetry.