Abstract: According to one embodiment, a PLL circuit includes: a digital phase comparator that captures an instantaneous value of a reference clock signal, which is a digital since wave, in synchronization with a feedback clock signal, and detects a phase difference between the reference clock signal and the feedback clock signal based on the captured instantaneous value; a control voltage generation unit that generates a control voltage according to the phase difference; a voltage control oscillator that generates an output clock signal having a frequency according to the control voltage; a frequency divider that divides a frequency of the output clock signal to generate the feedback clock signal; and a control unit that amplifies the reference clock signal to be supplied to the digital phase comparator with an amplification factor according to the phase difference.

Abstract: According to one embodiment, a PLL circuit includes: a digital phase comparator that captures an instantaneous value of a reference clock signal, which is a digital since wave, in synchronization with a feedback clock signal, and detects a phase difference between the reference clock signal and the feedback clock signal based on the captured instantaneous value; a control voltage generation unit that generates a control voltage according to the phase difference; a voltage control oscillator that generates an output clock signal having a frequency according to the control voltage; a frequency divider that divides a frequency of the output clock signal to generate the feedback clock signal; and a control unit that amplifies the reference clock signal to be supplied to the digital phase comparator with an amplification factor according to the phase difference.

Abstract: A memory device includes a memory and a control circuit. The memory includes cells arranged in a matrix of rows and columns. The cells are grouped into banks, and each of the banks contains at least one column of the cells. The control circuit instructs a read operation in units of rows and a write operation in units of cells, and inhibits the read operation in units of the banks when the write operation is carried out to a specific one of the cells of a specific one of the banks.

Abstract: A memory device includes a memory and a control circuit. The memory includes cells arranged in a matrix of rows and columns. The cells are grouped into banks, and each of the banks contains at least one column of the cells. The control circuit instructs a read operation in units of rows and a write operation in units of cells, and inhibits the read operation in units of the banks when the write operation is carried out to a specific one of the cells of a specific one of the banks.