Abstract: A testing method for the bolt to be used under the conditions of excessive wind force by which bolts made of Cr—Mo steel can be separated into a group of bolts usable in cold areas and a group of bolts unusable in cold areas without conducting Charpy impact test involving complicated operation, specifically, a testing method for determining whether bolts made of heat-treated Cr—Mo steel are usable or unusable in cold areas, wherein the determination is conducted on the basis of both J parameter calculated by formula: J=(Si %+Mn %) (P %+Sn %) 104 (wherein P %, Si %, Mn % and Sn % are contents (mass %) of phosphorus (P), silicon (Si), manganese (Mn) and tin (Sn) respectively as disclosed in the inspection certificate of the Cr—Mo steel) and bolt diameter.

Abstract: An object is to set an appropriate evaluation index based more closely on reality by appropriately evaluating durability/strength necessary for operating a wind turbine. Provided is an evaluation-index setting method including a first step of obtaining time-series data of a load that acts on an evaluation target portion of a wind turbine, when operating under a predetermined operating condition, and of obtaining stress time-series data from this load time-series data and a second step of obtaining a fracture toughness value which is a value that is minimally necessary for the evaluation target portion to maintain predetermined strength for a case in which the evaluation target portion is subjected to stress based on the stress time-series data over a compensation operating period, and of determining, on the basis thereof, a required fracture toughness value that serves as an index.

Abstract: A testing method for the bolt to be used under the conditions of excessive wind force by which bolts made of Cr—Mo steel can be separated into a group of bolts usable in cold areas and a group of bolts unusable in cold areas without conducting Charpy impact test involving complicated operation, specifically, a testing method for determining whether bolts made of heat-treated Cr—Mo steel are usable or unusable in cold areas, wherein the determination is conducted on the basis of both J parameter calculated by formula: J=(Si %+Mn %) (P %+Sn %) 104 (wherein P %, Si %, Mn % and Sn % are contents (mass %) of phosphorus (P), silicon (Si), manganese (Mn) and tin (Sn) respectively as disclosed in the inspection certificate of the Cr—Mo steel) and bolt diameter.

Abstract: A method for manufacturing a cleaning material wherein a supercooled liquid formed by cooling a raw material liquid, which is comprised of water or a mixed liquid composed of water and a liquid organic compound having a freezing point lower than that of water, to a supercooled state is jetted into a cleaning material manufacturing vessel, thus forming a turbulent flow region of the supercooled liquid inside the manufacturing vessel, and a portion of the supercooled liquid jetted contacts seed ice generated inside the manufacturing vessel, so that the supercooled liquid undergoes a phase change into ice particles, and these ice particles are grown by being subjected to turbulent flow agitation in the turbulent flow region, thus producing a cleaning material with a sherbet-like consistency showing co-presence of a solid and liquid in which ice particles and a liquid are mixed.

Abstract: A cleaning material for cleaning, for instance, a substrate by being sprayed onto and colliding with the substrate being in a sherbet-form (in which a solid and liquid are co-present) that contains ice particles and being manufactured by cooling a mixed liquid, which comprises pure water and an organic compound liquid having a solidification point lower than that of pure water, to a supercooled state, and generating ice crystals by applying an external force to supercooled liquid which consists of the cooled mixed liquid. The application of the external force to the supercooled liquid is accomplished by, for example, an abruptly expanded portion formed in a flow passage for the supercooled liquid. When the supercooled liquid flows into the abruptly expanded portion, a swirling stream is generated that dissolves the supercooled state of the supercooled liquid, thus solidifying the water in the supercooled liquid to form ice particles.

Abstract: Super clean air having therein chemical components—such as hydrocarbons, organic halogens, acidic gases, basic gases, aldehydes, nitrogen oxides, and H2O (that is, all components other than oxygen, nitrogen, and noble gases—the types of chemical components differ depending on the source of the air)—in concentrations no more than 1 ppb and a dew point lower than −40° C., is obtained from the atmosphere by low-temperature adsorption treatment in stages at temperatures ranging from −40° C. to −180° C. Material air collected from the atmosphere is pretreated in a room-temperature adsorption step to remove moisture and carbon dioxide. The pretreated air is then low-temperature adsorption treated by absorbents in a plurality of steps to adsorb the gaseous chemical components, the treatment temperature being lower in each succeeding step. Treatment at −40° C. may remove, for example, HF, SO2, and/or NH3. Treatment at −100° C.

Abstract: Super clean air suitable for use in a tunnel-type wafer transport system, etc., is produced efficiently with the specific energy consumption reduced and the yield improved by making good use of part of cooling energy and gas produced in a low temperature separation type nitrogen producing apparatus. Material air 1a collected from the atmosphere is pretreated in a room temperature adsorption tower 7, this pretreated air is adsorption treated at -60.degree. C. in a first low temperature adsorption tower 9, and the treated air 1c is further adsorption treated at -150.degree. C. in a second low temperature adsorption tower 10, thereby producing super clean air 1e containing not higher than 1 ppb of the chemical components other than nitrogen, oxygen and noble gases and having a dew point of not higher than -100.degree. C.

Abstract: A two-fluid cleaning jet nozzle has an atomizing unit provided with an atomizing tube in which a liquid is atomized by a pressurized gas into liquid droplets, and an accelerating unit provided with an accelerating tube which accelerates and jets the liquid droplets against the surface of a workpiece to remove dust particles adhering to the surface of the workpiece. The sectional area of the atomizing tube available for gas flow is greater than the sectional area of the accelerating tube available for flow of the gas and the liquid droplets. The accelerating tube has the shape of a straight cylindrical tube or a Laval nozzle.

Abstract: A cleaning device for semiconductor wafers includes a cleaning vessel, a frozen particle supply unit, a jet nozzle for ejecting the frozen particles toward the semiconductor wafer supported within the cleaning vessel, an exhaust duct coupled to the cleaning vessel, and an exhaust blower. First and second exhausts guide to the exhaust duct frozen particles and contaminants from within the cleaning vessel near the wafer and near the walls of the vessel, respectively. The first exhaust includes a first exhaust guide pipe whose upper and lower ends open to an interior of the cleaning vessel near the wafer and to the exhaust duct, respectively. The second exhaust may include a tapered exhaust guide pipe surrounding the first exhaust guide pipe or a plurality of exhaust guide pipes disposed circumferentially uniformly around the first exhaust guide pipe.

Abstract: A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.

Abstract: A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles.

Abstract: A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles.

Abstract: A solid surface cleaning device utilizes a jet of ice particles of ultrapure water for removing contaminants from a surface of a solid such as a semiconductor wafer. The electrical resistivity of ultrapure water stored in a tank is reduced by means of a gas such as dry air or carbon dioxide evolving into the water from a bubble tube disposed in the tank. The water whose resistivity is thus reduced is sprayed from a nozzle into an ice-making container which is refrigerated by the vaporization of a refrigerant discharged into the container. The fine ice particles that are thus generated in the container are sprayed and blasted from a jet spray nozzle onto the surface of the cleaned solid supported within a jet spray chamber. The air inside the chamber is exhausted by a blower together with the ice particles that have been ejected from the jet spray nozzle.

Abstract: A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles.

Abstract: A method for forming a fine unevenness over a surface of a base plate (9) for a magnetic disc comprises the step of bombarding the surface of the base plate (9) with a jet of gas mixed with fine ice particles (4) that are formed by mixing a flow of fine pure water droplets from a spray (2) and a counter directed flow of nitrogen gas cooled by being bubbled through a quantity of liquid nitrogen held in a reservoir (6). The obtained unevenness can be controlled by varying the size of the ice particles, the jet pressure, the distance between the jet nozzle providing the size of the ice particle jet and the receiving surface of base plate (9), the duration of spraying and the spraying angle with respect to the base plate.

Abstract: A method for the production of microfine frozen particles comprises filling a vessel with a cold gas which may be a cooled gas or mixed gas obtainable by mechanical refrigeration of a refrigerant gas, air, or the like, atomizing a material to be frozen, such as water, into the cold gas so that the atomized particles become frozen by heat exchange with the cold gas, and collecting the fine frozen particles thus produced.