Abstract: Infrared (IR) photodetecting systems and methods. A system may comprise at least one photosite having a Ge photosensitive area (GPSA) that includes an absorber doped area having a first polarity and a Si layer comprising a first doped area (FDA), a storage well (SW), a floating diffusion (FD) and a transfer gate (TG); a controllable power source (CPS); and a controller, operable to control the CPS and the TG, to concurrently provide at a first time controlled voltages to the GPSA, FDA and FD, thereby forcing charge carriers of a given polarity (CCGP) from the GPSA toward the SW and to provide at another time other voltages to the GPSA, FDA and FD, thereby diminishing the forcing of the CCGP toward the SW and ceasing collection of signals by the SW, and to intermittently transfer the CCGP from the SW via the TG to the FD, where the CCSP are read via an electrode coupled to the FD.