Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

Abstract: A semiconductor fabrication system includes a mixing bowl, a distribution system receiving a mixture of gases from the mixing bowl, and a process chamber in fluid communication with the distribution system for performing a variety of semiconductor processes, e.g., deposition and etch processes, on a substrate. A plurality of mixing bowl sensors are disposed within a cavity of the mixing bowl and issue gas signals indicative of the type and flow-rate of the detected gas. Further, at least one process chamber sensor is provided within the process chamber and disposed proximal to the substrate. The process chamber sensor has a resonance property which changes upon exposure to the semiconductor process, i.e., a build-up of deposited material on a surface of the sensor, and issues material process signals indicative of the anticipated material on the surface of the substrate.

Abstract: A system and method for determining the changes in resonance frequency in crystal microbalance (CM) sensors and the resulting changes in the determination of incremental mass on the CM sensors caused by temperature. Dual mode resonances and coefficients are used in a deconvolution process to determine and extract the frequency shift caused by temperature to provide the temperature compensated incremental mass (?M). In one embodiment, dual mode analysis is provided using a mass mode (e.g., the c-mode fundamental frequency (fc100)) and a temperature mode (e.g., the anharmonic frequency (fc102)) and associated coefficients. In other embodiments that are more sensitive to temperature changes, dual mode analysis is provided using the b-mode fundamental frequency (fb100) as the temperature-mode and associated coefficients.

Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

Abstract: A system for the detection of defect occurrence and location in a fabrication process tool, which comprises an inspection wafer comprising a plurality of sensors and a power source, the inspection wafer configured to be inserted to the fabrication process tool and inspect the fabrication process tool; and a processing unit configured to receive as input data from the sensors and calculate location, time occurrences and physical characteristics of defects by comparing between data received from at least one of the sensors at different times throughout inspection of the fabrication process tool. The inspection wafer may further comprise one or more transmitters configured to transmit signals such that the sensors are able to detect changes in one or more properties of the signals that occur as a result of a defect.