Patents by Inventor Mathew C. Schmidt

Mathew C. Schmidt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10923878
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: February 16, 2021
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Patent number: 10862272
    Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: December 8, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
  • Patent number: 10651629
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: January 21, 2019
    Date of Patent: May 12, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 10511149
    Abstract: A gallium- and nitrogen-containing laser device including a facet with surface treatment to improve an optical beam is disclosed.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: December 17, 2019
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
  • Patent number: 10505344
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescence mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: December 10, 2019
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Patent number: 10186841
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: January 22, 2019
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 10122148
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: November 6, 2018
    Assignee: Soraa Laser Diodide, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Patent number: 9887517
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: February 6, 2018
    Assignee: SORAA LASER DIODE, INC.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 9837790
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: December 5, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Patent number: 9722398
    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: August 1, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang
  • Patent number: 9608407
    Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: March 28, 2017
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
  • Patent number: 9466949
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: October 11, 2016
    Assignee: SORAA LASER DIODE, INC.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 9362720
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: July 7, 2015
    Date of Patent: June 7, 2016
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Publication number: 20160006217
    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
    Type: Application
    Filed: June 11, 2015
    Publication date: January 7, 2016
    Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang
  • Patent number: 9184563
    Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: November 10, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
  • Patent number: 9166372
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: October 20, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 9142935
    Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: September 22, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Nick Pfister, Yu-Chia Chang, Mathew C. Schmidt, Drew Felker
  • Patent number: 9130119
    Abstract: An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
    Type: Grant
    Filed: December 11, 2007
    Date of Patent: September 8, 2015
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Steven P. DenBaars, Mathew C. Schmidt, Kwang Choong Kim, James S. Speck, Shuji Nakamura
  • Patent number: 9106049
    Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: August 11, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
  • Patent number: 9071039
    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: June 30, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang