Patents by Inventor Mathew C. Schmidt
Mathew C. Schmidt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11791606Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: January 5, 2021Date of Patent: October 17, 2023Assignee: KYOCERA SLD Laser, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
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Patent number: 11626708Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.Type: GrantFiled: December 1, 2020Date of Patent: April 11, 2023Assignee: KYOCERA SLD Laser, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
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Patent number: 11177634Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: May 11, 2020Date of Patent: November 16, 2021Assignee: KYOCERA SLD Laser, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10923878Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: December 9, 2019Date of Patent: February 16, 2021Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
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Patent number: 10862272Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.Type: GrantFiled: December 16, 2019Date of Patent: December 8, 2020Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
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Patent number: 10651629Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: January 21, 2019Date of Patent: May 12, 2020Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10511149Abstract: A gallium- and nitrogen-containing laser device including a facet with surface treatment to improve an optical beam is disclosed.Type: GrantFiled: October 8, 2018Date of Patent: December 17, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
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Patent number: 10505344Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescence mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: October 25, 2018Date of Patent: December 10, 2019Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
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Patent number: 10186841Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: February 2, 2018Date of Patent: January 22, 2019Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 10122148Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: October 30, 2017Date of Patent: November 6, 2018Assignee: Soraa Laser Diodide, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
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Patent number: 9887517Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: October 10, 2016Date of Patent: February 6, 2018Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 9837790Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: June 3, 2016Date of Patent: December 5, 2017Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
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Patent number: 9722398Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.Type: GrantFiled: June 11, 2015Date of Patent: August 1, 2017Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang
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Patent number: 9608407Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.Type: GrantFiled: October 8, 2015Date of Patent: March 28, 2017Assignee: SORAA LASER DIODE, INC.Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
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Patent number: 9466949Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: September 17, 2015Date of Patent: October 11, 2016Assignee: SORAA LASER DIODE, INC.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 9362720Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.Type: GrantFiled: July 7, 2015Date of Patent: June 7, 2016Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Yu-Chia Chang
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Publication number: 20160006217Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.Type: ApplicationFiled: June 11, 2015Publication date: January 7, 2016Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz Elsass, Yu-Chia Chang
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Patent number: 9184563Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.Type: GrantFiled: August 26, 2013Date of Patent: November 10, 2015Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Mathew C. Schmidt, Bryan Ellis
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Patent number: 9166372Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.Type: GrantFiled: June 27, 2014Date of Patent: October 20, 2015Assignee: Soraa Laser Diode, Inc.Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
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Patent number: 9142935Abstract: A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking.Type: GrantFiled: April 29, 2014Date of Patent: September 22, 2015Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Nick Pfister, Yu-Chia Chang, Mathew C. Schmidt, Drew Felker