Patents by Inventor Mathew Schmidt

Mathew Schmidt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SURFACES
    Publication number: 20210376573
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: June 9, 2021
    Publication date: December 2, 2021
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
    Patent number: 11070031
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: July 20, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • HYDRAULIC CONTROL SYSTEM FOR ON-VEHICLE WINCH
    Publication number: 20210171325
    Abstract: A hydraulic control circuit for a hydraulic on-vehicle winch comprises a winch control circuit interposed between a main circuit pressure inlet and the hydraulic connectors on the winch and governed by a pilot-operated directional valve. When a reel-out pilot valve shifts the pilot-operated directional valve, hydraulic flow to a reel-out port is permitted while flow to a reel-in port is obstructed. Conversely, when a reel-in pilot valve shifts the pilot-operated directional valve, hydraulic flow to the reel-in port is permitted while flow to the reel-out port is obstructed. A selectively configurable enabling circuit is interposed between the main circuit pressure inlet and the winch control circuit. In an enabling configuration, hydraulic flow from the main circuit pressure inlet to the pilot-operated directional valve, the reel-out pilot valve and the reel-in pilot valve is permitted. In a disabling configuration in which hydraulic flow to the pilot-operated directional valve is obstructed.
    Type: Application
    Filed: December 4, 2020
    Publication date: June 10, 2021
    Inventors: Devan Anthony Soetemans, Quinn Mathew Schmidt
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20200091684
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: September 23, 2019
    Publication date: March 19, 2020
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 10424900
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: September 24, 2019
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20190103728
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 4, 2019
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 10090644
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: October 2, 2018
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • LOW VOLTAGE LASER DIODES ON {20-21} GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20180097337
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: November 21, 2017
    Publication date: April 5, 2018
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 9853420
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: December 26, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • LOW VOLTAGE LASER DIODES ON GALLIUM AND NITROGEN CONTAINING SUBSTRATES
    Publication number: 20170331255
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: November 29, 2016
    Publication date: November 16, 2017
    Applicant: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Method of fabricating optical devices using laser treatment
    Patent number: 9786810
    Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: October 10, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Nicholas J. Pfister, James W. Raring, Mathew Schmidt
  • Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
    Patent number: 9543738
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: January 10, 2017
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates
    Publication number: 20160013620
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Application
    Filed: September 16, 2010
    Publication date: January 14, 2016
    Applicant: Kaai, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Laser devices having a gallium and nitrogen containing semipolar surface orientation
    Patent number: 9166373
    Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: October 20, 2015
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew Schmidt, Bryan Ellis, Hua Huang, Melvin McLaurin, Christiane Poblenz Elsass
  • METHOD OF FABRICATING OPTICAL DEVICES USING LASER TREATMENT
    Publication number: 20150236196
    Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
    Type: Application
    Filed: May 4, 2015
    Publication date: August 20, 2015
    Inventors: Nicholas J. Pfister, James W. Raring, Mathew Schmidt
  • Method of fabricating optical devices using laser treatment
    Patent number: 9048170
    Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
    Type: Grant
    Filed: November 9, 2010
    Date of Patent: June 2, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Nicholas J. Pfister, James W. Raring, Mathew Schmidt
  • Laser devices having a gallium and nitrogen containing semipolar surface orientation
    Patent number: 8971368
    Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: March 3, 2015
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Mathew Schmidt, Bryan Ellis, Hua Huang, Melvin McLaurin, Christiane Poblenz
  • Method of Fabricating Optical Devices Using Laser Treatment
    Publication number: 20130234111
    Abstract: A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
    Type: Application
    Filed: November 9, 2010
    Publication date: September 12, 2013
    Applicant: Soraa, Inc.
    Inventors: Nicholas J. Pfister, James W. Raring, Mathew Schmidt
  • Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
    Patent number: 8492185
    Abstract: A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: July 23, 2013
    Assignee: Soraa, Inc.
    Inventors: Mark P. D'Evelyn, James Speck, William Houck, Mathew Schmidt, Arpan Chakraborty
  • Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
    Patent number: 8355418
    Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: January 15, 2013
    Assignee: Soraa, Inc.
    Inventors: James W. Raring, Nick Pfister, Mathew Schmidt, Christiane Poblenz