Patents by Inventor Mathias Baranyai

Mathias Baranyai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements
    Patent number: 8888947
    Abstract: By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
    Type: Grant
    Filed: March 5, 2010
    Date of Patent: November 18, 2014
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Matthias Schaller, Uwe Schulze, Mathias Baranyai
  • METHOD AND SYSTEM FOR ADVANCED PROCESS CONTROL IN AN ETCH SYSTEM BY GAS FLOW CONTROL ON THE BASIS OF CD MEASUREMENTS
    Publication number: 20100161103
    Abstract: By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
    Type: Application
    Filed: March 5, 2010
    Publication date: June 24, 2010
    Inventors: Matthias SCHALLER, Uwe SCHULZE, Mathias BARANYAI
  • Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements
    Patent number: 7704889
    Abstract: By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: April 27, 2010
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Matthias Schaller, Uwe Schulze, Mathias Baranyai
  • METHOD AND SYSTEM FOR ADVANCED PROCESS CONTROL IN AN ETCH SYSTEM BY GAS FLOW CONTROL ON THE BASIS OF CD MEASUREMENTS
    Publication number: 20070178699
    Abstract: By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
    Type: Application
    Filed: October 5, 2006
    Publication date: August 2, 2007
    Inventors: Matthias Schaller, Uwe Schulze, Mathias Baranyai