Abstract: A non-volatile semiconductor memory device comprising a control circuit is provided, the control circuit performing a data erasure by applying predetermined erase voltages to predetermined blocks of a memory cell array including memory cells disposed on each intersection of a plurality of word lines and a plurality of bit lines, and the control circuit applying the erase voltages to the memory cells to erase data by applying word line voltages different to each other to even-numbered word lines and odd-numbered word lines of the memory cell array except to an edge part thereof, and by applying a voltage different to the word line voltages to the word line in the edge part of the memory cell array.

Abstract: Task: to decrease the number of times of the verifying process and shorten the time to program. Means for Solving the Problems: In a non-volatile semiconductor memory device, comprising: a non-volatile memory array, which stores multi-valued states by setting a plurality of different threshold voltages to correspond to a plurality of states to each memory cell; and a control circuit, which controls programming to the memory cell array, when increasing the programming voltage from a predetermined programming start voltage by a predetermined voltage increment gradually and verifying it at the same time for programming the memory cell, the control circuit determines and sets the programming start voltage for programming according to a programming pulse number at the moment the verifying process passes in the preceding programming.