Abstract: A method of forming an HBT structure includes forming an HBT epitaxial layer structure over a first substrate wafer; performing a first substrate transfer of the HBT epitaxial layer structure and the first substrate wafer onto a second substrate wafer, including inverting the HBT epitaxial layer structure and the first substrate wafer; removing the first substrate wafer; forming a first subcollector metal layer over the HBT epitaxial layer structure; performing a second substrate transfer of the subcollector metal layer and the HBT epitaxial layer structure onto a third substrate wafer with a second subcollector metal layer, including inverting the subcollector metal layer and the epitaxial layer structure; compression bonding the first and second subcollector metal layers to provide a bonded subcollector metal layer; and removing the second substrate wafer. The HBT structure includes the third substrate wafer, the bonded subcollector metal layer, and the HBT epitaxial layer structure.

Abstract: A stacked IC structure has an integrated circuit (IC) having a front IC side, a back IC side, and a first conductive feature formed on the front IC side. A through-chip via connects to the first conductive feature on the front IC side. A substrate has an external circuit formed on a front surface. The IC attaches to the front surface of the substrate and the through-chip via forms a connection between the first conductive feature and the external circuit.

Abstract: A plurality of devices are hermetically packaged at the wafer level by 1) providing a substrate wafer having a plurality of at least partially-formed devices thereon; 2) forming separation walls on the substrate wafer, around different ones of the at least partially-formed devices; and 3) wafer bonding a cap wafer to the separation walls, to form a plurality of hermetic packages.

Abstract: A stacked IC structure has an integrated circuit (IC) having a front IC side, a back IC side, and a first conductive feature formed on the front IC side. A through-chip via connects to the first conductive feature on the front IC side. A substrate has an external circuit formed on a front surface. The IC attaches to the front surface of the substrate and the through-chip via forms a connection between the first conductive feature and the external circuit.

Abstract: An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor.