Patents by Inventor Mathias Born

Mathias Born has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MICRO GAS TURBINE SYSTEM WITH A PIPE-SHAPED RECUPERATOR
    Publication number: 20150023778
    Abstract: A micro gas turbine system (1) having an annular recuperator (9) for heat transfer from an exhaust gas flow (13) to an intake air flow (8). The exhaust gas flow (13) flows through radial inlets (18) into the recuperator (9) and/or out of the recuperator (9) through radial outlets (19).
    Type: Application
    Filed: February 19, 2013
    Publication date: January 22, 2015
    Applicant: BABCOCK BORSIG STEINMULLER GMBH
    Inventors: Peter Berg, Frieder Neumann, Mathias Born, Karl-Friedrich Schroder
  • MICRO GAS TURBINE SYSTEM HAVNIG AN ANNULAR RECUPERATOR
    Publication number: 20150020500
    Abstract: A micro gas turbine system (16) having an annular recuperator (24). The recuperator (24) serves to transfer heat from an exhaust stream (27) of the turbine (17) to an air stream (23) compressed by a compressor (19). Passages (1) for the exhaust stream (27) and passages (2) for the air stream (23) are arranged in alternation to each other in the recuperator (24). Adjacent passages (1, 2) are separated from each other by at least one wall (15). A filler (5) is arranged in the passages (1, 2) of at least one fluid stream.
    Type: Application
    Filed: February 19, 2013
    Publication date: January 22, 2015
    Applicant: BABCOCK BORSIG STEINMULLER GMBH
    Inventors: Lina Kling, Frieder Neumann, Mathias Born, Karl-Friedrich Schroder, Thomas Dziekan, Holger Alder, Ornella Mattner
  • Semiconductor device
    Patent number: 8362551
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: January 29, 2013
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlein, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE
    Publication number: 20120025303
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Application
    Filed: October 11, 2011
    Publication date: February 2, 2012
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • Semiconductor device with trench field plate including first and second semiconductor materials
    Patent number: 8044459
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Grant
    Filed: November 10, 2008
    Date of Patent: October 25, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey
  • SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE
    Publication number: 20100117144
    Abstract: In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
    Type: Application
    Filed: November 10, 2008
    Publication date: May 13, 2010
    Applicant: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Walter Rieger, Andrew Wood, Mathias Born, Ralf Siemieniec, Jan Ropohl, Martin Poelzl, Oliver Blank, Uli Hiller, Oliver Haeberlen, Rudolf Zelsacher, Maximilian Roesch, Joachim Krumrey