Abstract: The invention relates to a carrier arrangement (100; 500; 600; 700; 800; 900; 1000), and a method for producing a carrier arrangement. The method comprises: producing a layer (130; 530; 630; 730; 830; 930; 1030) on a surface (120; 520; 620; 720; 820; 920; 1020) of a carrier (110; 510; 610; 710; 810; 910; 1010), the layer comprising a first region (131; 531; 631; 731; 831; 931; 1031) and a second region (132; 532; 632; 732; 832; 932; 1032) connected to the first region, the first region covering a first surface region (121; 521; 621; 721; 821; 921; 1021) of the carrier and the second region covering a second surface region (122; 722; 922) of the carrier, detaching the second region of the layer from the carrier, the first region of the layer remaining on the first surface region of the carrier and not being separated from the second region, the layer being flexible in the detached second region.

Abstract: A semiconductor device comprises a material layer adapted to efficiently stop alpha particles that are substantially generated within a solder bump of a flip chip device. The materials used for stopping the alpha particles are compatible with standard back-end processing and do not degrade adhesion of the solder bump to the remaining substrate. Moreover, a low electrical resistance is maintained and heat dissipation may be improved.

Abstract: The present invention allows testing of bump connections under predefined conditions. To this end, a test structure including two substrates, each substrate having bond pads that are provided for flip-chip connecting both substrates. These bond pads may have electrical contact to other bond pads and/or special probe pads which are provided for making electrical connections to external devices. Electrically conductive bumps are formed on at least some of the bond pads of one of the substrates, and the bumps are electrically and mechanically connected to the bond pads in the other substrate.

Abstract: A semiconductor device comprises a material layer adapted to efficiently stop alpha particles that are substantially generated within a solder bump of a flip chip device. The materials used for stopping the alpha particles are compatible with standard back-end processing and do not degrade adhesion of the solder bump to the remaining substrate. Moreover, a low electrical resistance is maintained and heat dissipation may be improved.

Abstract: The present invention allows testing of bump connections under predefined conditions. To this end, a test structure comprises two substrates comprising bond pads being provided for flip-chip connecting both substrates. These bond pads may have electrical contact to other bond pads and/or special probe pads which are provided for making electrical connections to external devices. Electrically conductive bumps are formed on at least some of the bond pads of one of the substrates, and the bumps are electrically and mechanically connected to the bond pads in the other substrate.