Abstract: The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. Separating trenches are formed in the substrate along the dividing pattern. The functional layer is cut through along the dividing pattern by means of coherent radiation. Each divided semiconductor chip has part of the semiconductor layer sequence, part of the substrate, and part of the functional layer. The invention further relates to a semiconductor chip.

Abstract: A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

Abstract: A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Abstract: A method for singulating an assemblage (1) into a plurality of semiconductor chips (10) is specified, wherein an assemblage comprising a carrier (4), a semiconductor layer sequence (2) and a metallic layer (3) is provided. Separating trenches (45) are formed in the carrier. The assemblage is subjected to mechanical loading, with the result that the metallic layer breaks along the separating trenches and the assemblage is singulated into semiconductor chips, wherein the singulated semiconductor chips each have part of the semiconductor layer sequence, of the carrier and of the metallic layer. A semiconductor chip (10) is furthermore specified.

Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface, wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor chips.

Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Abstract: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface. wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor.

Abstract: A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Abstract: The invention relates to a photodiode array comprising a photodiode and a submount, via which the photodiode is contacted, said photodiode and said submount being interlinked by eutectic bonding. The invention further relates to a method for establishing a link between a first semiconductor element and a second semiconductor element which have different outer contours, the two elements being interlinked by eutectic bonding when already being present as a wafer composite. The two interlinked wafers are subdivided one by one and independently of each other in accordance with the desired outer contour.

Abstract: Cavities for holding semiconductor chips are etched anisotropically into a semiconductor wafer. An orientation of the wafer in the (100) pulling direction results in geometrically exactly etched sidewalls of the cavities with an angle of 125.3°. What is thereby achieved is that chips can slip into the cavity with a low risk of damage. A transparent cover plate is situated on the cavity plate.

Abstract: An optical sensing head, which is for reading out an optical data memory, has a substrate with a main surface. An edge-emitting laser component is configured on the main surface of the substrate and has irradiation axis oriented essentially parallel to the first main plane. A deflection device is arranged on the main surface of the substrate and deflects the laser radiation in a direction that is essentially perpendicular to the main surface. At least one signal detector is provided for sensing the laser radiation that is reflected by the optical data memory. An optical element guides the deflected laser radiation to the optical data memory and guides reflected laser radiation to the signal detector. The optical element is connected to the substrate by at least one supporting element. The invention also includes a method for fabricating such a sensing head.

Abstract: A photo-optical transmitter assembly is produced in the following manner: a glass wafer is fixed onto a transparent submount and a V-shaped recess is subsequently created between optical prism elements using targeted sawcuts. A rod-shaped element with a reflective coating is inserted into the V-shaped recess. A laser beam from a semiconductor laser is thus deflected by 90° on the rod-shaped element with the reflective coating and traverses the submount.