Abstract: In one embodiment, a method includes providing a chip carrier, creating holes for electrical through-connections in the chip carrier, producing a thin metallization in the holes, filling the metallized holes with a filling of a plastic, and applying optoelectronic semiconductor chips on the metallized holes so that the semiconductor chips are ohmically conductively connected with an associated metallization, wherein a mean thickness of the metallization in the holes is between 0.1 ?m and 0.7 ?m, inclusive, and wherein a diameter of the holes exceeds the mean thickness of the metallization by at least a factor of 10.

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Abstract: A suspension for protecting a semiconductor material, comprising a carrier medium, trimethylolpropane as a plasticizer, benzotriazole derivate as an absorber dye, and inorganic particles selected from the group consisting of aluminum nitride, silicon nitride and boron nitride, wherein the thermal conductivity of the suspension is about 1 W/mk to about 2 W/mk.

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract: A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

Abstract: A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface, wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor chips.

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser.

Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Abstract: A carrier substrate includes a first major face and a second major face opposite the first major face. A diode structure is formed between the first major face and the second major face, which diode structure electrically insulates the first major face from the second major face at least with regard to one polarity of an electrical voltage.

Abstract: A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface. wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor.

Abstract: A suspension for protecting a semiconductor material includes a polymeric matrix as carrier medium, inorganic particles, and at least one of an absorber dye or a plasticizer.

Abstract: The invention relates to a photodiode array comprising a photodiode and a submount, via which the photodiode is contacted, said photodiode and said submount being interlinked by eutectic bonding. The invention further relates to a method for establishing a link between a first semiconductor element and a second semiconductor element which have different outer contours, the two elements being interlinked by eutectic bonding when already being present as a wafer composite. The two interlinked wafers are subdivided one by one and independently of each other in accordance with the desired outer contour.