Abstract: The present invention relates to an apparatus (12) for processing information by evaluating randomly moving tokens corresponding to particles or quasiparticles, comprising: an input interface (20) for receiving an input signal; a carrier (22) for supporting a plurality of pathways (30) for the randomly moving tokens and at least one join (32) for connecting two pathways and for permitting a passing of a first token in a first pathway of the two connected pathways through the join upon presence of a second token from a second pathway of the two connected pathways in the join; an insertion unit (24) for inserting tokens into the pathways based on the input signal; an excitation unit (26) for applying a stimulus to a token in at least one pathway of the plurality of pathways, said stimulus acting to increase the random movement of the token in a direction substantially parallel to the carrier; and an output unit (28) for providing an output signal based on a location of at least one token after a predefined or d

Abstract: The present disclosure proposes a spin valve device comprising a layer stack. The layer stack comprises one or more layers forming a unidirectionally magnetized reference system, a vortex-magnetized free layer, a non-magnetic layer separating the reference system from the free layer, and one or more layers forming a bias structure being exchange-coupled to the free layer, the bias structure having a vortex-magnetization with closed flux of a predetermined rotation direction.

Abstract: An apparatus for generating magnetic vortex spin structures includes a device for moving at least one magnetic domain wall in a magnetic domain wall channel structure; and a device for generating and storing at least one magnetic vortex spin structure in response to the magnetic domain wall moved in the domain wall channel structure.

Abstract: An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer. The second conductive layer contacts a second end of the magnetic layer. The magnetic layer includes first and second pinning regions at which magnetic domain walls are pinned. The widths of the magnetic layer at the first and second pinning regions are different.

Abstract: A memory element, logic element or sensor element is provided, which element comprises a switchable first magnetic component exhibiting a ferromagnetic or ferrimagnetic behaviour and comprising at least two magnetic domains with different magnetization directions and a domain wall between the magnetic domains. The element has electrodes operable to induce an electric current which at least partially flows through the domain wall with a current density high enough to cause the domain wall to reversibly propagate within the magnetic component. The first magnetic component may belong to a layered system further including a second magnetic component with a fixed magnetization and a non-magnetic spacer layer arranged between the first and second magnetic component. In such a layered system, the electrical resistance may depend on the relative orientation of the magnetization directions of the first and second magnetic component, due to the GMR or TMR effect.

Abstract: A memory element, logic element or sensor element is provided, which element comprises a switchable first magnetic component exhibiting a ferromagnetic or ferrimagnetic behaviour and comprising at least two magnetic domains with different magnetisation directions and a domain wall between the magnetic domains. The element has electrodes operable to induce an electric current which at least partially flows through the domain wall with a current density high enough to cause the domain wall to reversibly propagate within the magnetic component. The first magnetic component may belong to a layered system further including a second magnetic component with a fixed magnetisation and a non-magnetic spacer layer arranged between the first and second magnetic component. In such a layered system, the electrical resistance may depend on the relative orientation of the magnetisation directions of the first and second magnetic component, due to the GMR or TMR effect.

Abstract: A magnetic element comprises a closed loop of ferromagnetic material having an even number of magnetic domains of opposite sense. The magnetisation within the domains is in a circumferential direction, and the domains have leading and trailing walls extending from the inside to the outside of the loop. The magnetic element has a geometry such that there are at least two stable equilibrium domain configurations in which the domain walls are confined in predetermined portions of the loop and wherein the element is switchable between the stable configurations upon the application of a external magnetic field.