Abstract: An apparatus and a method for monitoring a semiconductor component. A leakage current which flows through a first electrode and a second electrode of the semiconductor component is detected during operation of the semiconductor component, wherein the leakage current is compared, during a comparison, with a first limit value for the leakage current and an output is determined on the basis of a result of the comparison and/or wherein a time is determined at which an extreme point, in particular a maximum, of the leakage current occurs and an output is determined on the basis of the time, wherein the output comprises a state of the semiconductor component, and the output is output.

Abstract: A device and method for producing a semiconductor component. The method includes: arranging a dielectric layer between a first electrode and a second electrode of the semiconductor component, there being defects of a first defect type in the dielectric layer; determining a time period for movement of defects of the first defect type into a target position in the dielectric layer; determining a first voltage for the movement of said defects in the dielectric layer; applying the first voltage between the first electrode and the second electrode in the time period.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times ?1 and ?2, and generate the maximum changes in barrier height ??1 and ??2 at the electrodes. ?1 and ??1 are associated with the first defect type, and ?2 and ??2 are associated with the second defect type. ?1<?2 and ??1<??2 apply.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

Abstract: Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.