Patents by Inventor Mathias MYDLAK

Mathias MYDLAK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting layer suitable for bright luminescence
    Patent number: 11367848
    Abstract: The present invention relates to a light-emitting layer B comprising a first emitter compound (a) having a non-exited state S0(a), a first excited singlet state S1(a) and a first excited triplet state T1(a); a second emitter compound (b) having a non-exited state S0(b), a first excited singlet state S1(b) and a first excited triplet state T1(b), wherein the energy level of S1(a) is higher than that of S1(b), the energy level of S1(b) is higher than that of T1(b) and wherein the rate of reverse intersystem crossing from T1(a) to S1(a) is higher than the rate of excitation energy transfer from S1(a) to S1(b) and/or the rate of excitation energy transfer from T1(a) to T1(b), and/or wherein the energy level of T1(b) is higher than that of T1(a). Further, the present invention also refers to an opto-electronic device comprising such light-emitting layer B and use thereof.
    Type: Grant
    Filed: September 7, 2015
    Date of Patent: June 21, 2022
    Assignee: CYNORA GMBH
    Inventors: Thomas Baumann, Mathias Mydlak, Harald Flugge, Charlotte Flechon, Georgios Liaptsis
  • LIGHT-EMITTING LAYER SUITABLE FOR BRIGHT LUMINESCENCE
    Publication number: 20170250363
    Abstract: The present invention relates to a light-emitting layer B comprising a first emitter compound (a) having a non-exited state S0(a), a first excited singlet state S1(a) and a first excited triplet state T1(a); a second emitter compound (b) having a non-exited state S0(b), a first excited singlet state S1(b) and a first excited triplet state T1(b), wherein the energy level of S1(a) is higher than that of S1(b), the energy level of S1(b) is higher than that of T1(b) and wherein the rate of reverse intersystem crossing from T1(a) to S1(a) is higher than the rate of excition energy transfer from S1(a) to S1(b) and/or the rate of excition energy transfer from T1(a) to T1(b), and/or wherein the energy level of T1(b) is higher than that of T1(a). Further, the present invention also refers to an opto-electronic device comprising such light-emitting layer B and use thereof.
    Type: Application
    Filed: September 7, 2015
    Publication date: August 31, 2017
    Applicant: CYNORA GMBH
    Inventors: Thomas BAUMANN, Mathias MYDLAK, Harald FLUGGE, Charlotte FLECHON, Georgios LIAPTSIS