Patents by Inventor Mathias Prost

Mathias Prost has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
    Publication number: 20220231483
    Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
    Type: Application
    Filed: April 7, 2022
    Publication date: July 21, 2022
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Mathias PROST, Moustafa EL KURDI, Philippe BOUCAUD, Frederic BOEUF
  • Germanium-on-silicon laser in CMOS technology
    Patent number: 11329455
    Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
    Type: Grant
    Filed: May 6, 2020
    Date of Patent: May 10, 2022
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Mathias Prost, Moustafa El Kurdi, Philippe Boucaud, Frederic Boeuf
  • GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
    Publication number: 20200266609
    Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
    Type: Application
    Filed: May 6, 2020
    Publication date: August 20, 2020
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Mathias PROST, Moustafa EL KURDI, Philippe BOUCAUD, Frederic BOEUF
  • Germanium-on-silicon laser in CMOS technology
    Patent number: 10686297
    Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: June 16, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Mathias Prost, Moustafa El Kurdi, Philippe Boucaud, Frederic Boeuf
  • GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
    Publication number: 20180048123
    Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
    Type: Application
    Filed: March 6, 2015
    Publication date: February 15, 2018
    Applicants: STMicroelectronics (Crolles 2) SAS, Centre National de la Recherche Scientifique, Universite Paris SUD
    Inventors: Mathias Prost, Moustafa El Kurdi, Philippe Boucaud, Frederic Boeuf