Abstract: The invention relates to a method of joining substrates. It is the object of the invention in this respect to join substrates of substrate materials together without having to exert an increased effort for a coating with additional coating processes to be carried out and to be able to achieve a good quality of the join connection in so doing. In the method in accordance with the invention a pretreatment of at least one join surface of a substrate to be joined is carried out in low pressure oxygen plasma prior to the actual joining. On the joining, a contact force acts on the substrates to be joined in the range 2 kPa to 5 MPa and in this process a heat treatment is carried out at an elevated temperature of at least 100° C. and at under pressure conditions of a maximum of 10 mbar, preferably <10?3 mbar.

Abstract: The invention relates to a method of joining substrates. It is the object of the invention in this respect to join substrates of substrate materials together without having to exert an increased effort for a coating with additional coating processes to be carried out and to be able to achieve a good quality of the join connection in so doing. In the method in accordance with the invention a pretreatment of at least one join surface of a substrate to be joined is carried out in low pressure oxygen plasma prior to the actual joining. On the joining, a contact force acts on the substrates to be joined in the range 2 kPa to 5 MPa and in this process a heat treatment is carried out at an elevated temperature of at least 100° C. and at under pressure conditions of a maximum of 10 mbar, preferably <10?3 mbar.

Abstract: The invention is directed to electrostatic deflection systems for corpuscular beams which can be used particularly in microstructured and nanostructured applications in lithography installations or measuring equipment. According to the proposed object of the invention, the individual electrodes of a deflection system of this kind should permanently have and retain a very exact axially symmetric arrangement relative to one another. In the electrostatic deflection system according to the invention, rod-shaped electrodes are held in an axially symmetric arrangement in an inwardly hollow carrier through which a corpuscular beam can be directed. The carrier is formed of at least two, and at most four, carrier members which are connected to one another.

Abstract: The invention is directed to electrostatic deflection systems for corpuscular beams which can be used particularly in microstructured and nanostructured applications in lithography installations or measuring equipment. According to the proposed object of the invention, the individual electrodes of a deflection system of this kind should permanently have and retain a very exact axially symmetric arrangement relative to one another. In the electrostatic deflection system according to the invention, rod-shaped electrodes are held in an axially symmetric arrangement in an inwardly hollow carrier through which a corpuscular beam can be directed. The carrier is formed of at least two, and at most four, carrier members which are connected to one another.