Patents by Inventor Mathieu Bernard
Mathieu Bernard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240083990Abstract: The present invention relates to the identification of a new splice variant of STIM1 useful as a biomarker and as a target for the treatment of diseases.Type: ApplicationFiled: January 26, 2022Publication date: March 14, 2024Inventors: OLIVIER MIGNEN, NÉLIG LE GOUX, DELPHINE BERNARD, TIFFANY BERGOT, MATHIEU BLERY
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Publication number: 20230060860Abstract: A method for producing a resistive memory cell from a stack of layers having a metal-oxide layer interleaved between first and second electrodes includes forming, within one from among the first and second electrodes, an interlayer material-based electrode interlayer having a selectivity to etching greater than or equal to 2:1 relative to materials of the electrodes. During an etching of the stack, overetching is performed configured to laterally consume, in a horizontal direction, the interlayer material such that the electrode interlayer has a lateral recess greater than or equal to 10 nm.Type: ApplicationFiled: August 31, 2022Publication date: March 2, 2023Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Christelle CHARPIN-NICOLLE, Mathieu BERNARD, Rémy GASSILLOUD, Thomas MAGIS
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Patent number: 11329224Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ?Gf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ?Gf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ?Gf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ?Gf,T0 (M2NO): ?Gf,T0(M3M4O)<?Gf,T0(M1Oss)??Gf,T0(M2NO) or ?Gf,T0(M3M4NO)<?Gf,T0(M1Oss)??Gf,T0(M2NO).Type: GrantFiled: December 12, 2019Date of Patent: May 10, 2022Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Rémy Gassilloud, Mathieu Bernard, Christelle Charpin-Nicolle
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Patent number: 11101430Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: GrantFiled: August 5, 2019Date of Patent: August 24, 2021Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Publication number: 20210249599Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.Type: ApplicationFiled: February 5, 2021Publication date: August 12, 2021Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Chiara Sabbione, Marie-Claire Cyrille, Camille Laguna
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Publication number: 20210137779Abstract: Devices, systems, and methods for HFCWO oscillation therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition to a chest engagement device to provide HFCWO.Type: ApplicationFiled: November 10, 2020Publication date: May 13, 2021Inventors: Aaron A. AYU, Kok Boon R. ONG, Deny D. BARILEA, John A. BOBEY, Leonardo B. ARTIAGA, Jr., Xiaolan ZHANG, Wei BIAN, Yong Guan TAY, Mo Chuk WONG, Qingqing KOH, Joo Cheng CHHUA, Stacey REULAND, Mathieu BERNARD
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Publication number: 20200194671Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode.Type: ApplicationFiled: December 12, 2019Publication date: June 18, 2020Inventors: Rémy GASSILLOUD, Mathieu BERNARD, Christelle CHARPIN-NICOLLE
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Publication number: 20200052197Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.Type: ApplicationFiled: August 5, 2019Publication date: February 13, 2020Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Gabriele Navarro, Mathieu Bernard, Marie-Claire Cyrille, Chiara Sabbione
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Patent number: 9768379Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.Type: GrantFiled: January 6, 2016Date of Patent: September 19, 2017Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Remy Gassilloud, Mathieu Bernard
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Patent number: 9484729Abstract: An insulating support (20) for insulating an electrical conductor contained in aligned casing portions (34, 35), is held in a housing (39) defined by the flanges (36, 37) for joining the casing portions (34, 35) together, the flanges presenting contact faces (38) around the periphery (24) of the support (20). A single sealing gasket (41) is sufficient to prevent the atmosphere in the casing leaking to the outside, and that simplifies assembly of the electrical equipment, while at the same time protecting the support (20) from the outside. For application to medium- and high-voltage electrical equipment.Type: GrantFiled: October 21, 2013Date of Patent: November 1, 2016Assignee: ALSTOM TECHNOLOGY LTDInventors: Adrien Caron, Elodie Laruelle, Alexandre Giusti, Mathieu Bernard, Benjamin Müller, Lukas Treier
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Publication number: 20160197271Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.Type: ApplicationFiled: January 6, 2016Publication date: July 7, 2016Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Remy GASSILLOUD, Mathieu BERNARD
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Publication number: 20150296647Abstract: An insulating support (20) for insulating an electrical conductor contained in aligned casing portions (34, 35), is held in a housing (39) defined by the flanges (36, 37) for joining the casing portions (34, 35) together, the flanges presenting contact faces (38) around the periphery (24) of the support (20). A single sealing gasket (41) is sufficient to prevent the atmosphere in the casing leaking to the outside, and that simplifies assembly of the electrical equipment, while at the same time protecting the support (20) from the outside. For application to medium- and high-voltage electrical equipment.Type: ApplicationFiled: October 21, 2013Publication date: October 15, 2015Inventors: Adrien Caron, Elodie Laruelle, Alexandre Giusti, Mathieu Bernard, Benjamin Müller, Lukas Treier
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Patent number: 8710364Abstract: The bend of the invention makes it possible to provide a great number of different direction changes in the configuration of gas-insulated high-voltage lines. The bend mainly uses an angled ferrule (11). associated with two angular rings (12), placed between the angled ferrule (11) and a straight section (13) of the line, each angular ring (12) forming a change of direction defined by a determined angular offset angle (?) between said two joining surfaces. Thus, the use of an angled ferrule (11), in combination with one or two angular rings (12) makes it possible to obtain the four angular offsets of 70°, 80°, 100°, 110°. These same angular rings (12), used with an angled ferrule having an angle of 140° makes it possible to obtain the angles of 120°, 130°, 150°, and 160°. Use for constructing gas-insulated high-voltage lines.Type: GrantFiled: December 13, 2012Date of Patent: April 29, 2014Assignee: Alstom Technology Ltd.Inventors: Mathieu Bernard, Frederic Roussel