Abstract: An attachment mechanism including a hook end portion; a hook portion extending from the hook end portion in an arcuate shape; a hook tip defining an end of the hook portion, the hook tip extending towards a first direction, wherein the hook tip, the hook portion, and the hook tip define a receiving aperture; a first protrusion extending longitudinally towards a second direction; and a second protrusion extending longitudinally in parallel to the first protrusion, the first protrusion connected to the second protrusion via an intermediary portion, wherein the first protrusion, the second protrusion, and the intermediary portion define a cavity.

Abstract: A buckle receiver includes a housing defining a button opening, an inner frame member defining a tongue opening and a tongue cavity, a latch rotatably coupled to the inner frame member, the latch including a protrusion positionable within the tongue cavity, a locking member positionable within the tongue cavity of the inner frame member and biased into a raised position from a lowered position, and a button including a contact portion and an arm extending from the contact portion, the contact portion received within the button opening, the arm abutting against the latch. Movement of the button in a first direction away from the button opening rotates the latch in a first rotation direction. The button is inhibited from moving in the first direction when the locking member is in the raised position. The button is biased in a second direction opposite the first direction toward the button opening.

Abstract: An attachment mechanism is disclosed herein including a hook end portion, a hook portion extending from the hook end portion in an arcuate shape, a hook tip defining an end of the hook portion, the hook tip extending towards a first direction, wherein the hook end portion, the hook portion, and the hook tip define a receiving aperture, and a covering latch including a compression lid depressable into a crevice to move the covering latch away from the hook tip and position the covering latch into an open position, the compression lid including an aperture closure defining a concave indent.

Abstract: This disclosure relates to devices and methods that can increase the efficiency of patient support apparatus. A connecting device comprises an insert component that is configured to be insertable into a sleeve component. The sleeve component comprises a sleeve surface wall enclosing a sleeve open space extending from a first sleeve end to a second sleeve end and including a sleeve receiving cap on the second sleeve end with a first access port. The insert component comprises an insert surface wall enclosing an insert open space extending from a first insert end to a second insert end and including an insert receiving cap on the first insert end with a second access port. The sleeve component is attached to the insert component by a connector passing through the first and second access ports.

Abstract: A sling for supporting a subject is disclosed herein. The sling includes a body, one or more loops extending from the body, a first fastener coupled to a first portion of the body, and a second fastener coupled to a second portion of the body. The first fastener and the second fastener cooperate to enclose the one or more loops by selectively securing the first portion of the body to the second portion of the body in a folded configuration.

Abstract: Devices, systems, and methods for high frequency chest wall oscillation (HFCWO) therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition by a chest engagement device to provide HFCWO.

Abstract: Devices, systems, and methods for HFCWO oscillation therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition to a chest engagement device to provide HFCWO.

Abstract: A method for manufacturing a crystal layer includes using a substrate having a surface film made of a dichalcogenide of a transition metal, designated MX2, where “M” denotes a transition metal and “X” denotes a chalcogen, the surface film including a set of monolayers bonded together by van der Waals bonds; forming a polycrystalline aluminium nitride AlN film, having grain boundaries, on the surface film; and diffusing metal elements into the surface film, through the grain boundaries of the polycrystalline aluminium nitride AlN film, the metal elements being chosen to react chemically with MX2 by a redox reaction so as to convert the van der Waals bonds into covalent bonds, A crystalline layer is formed on the polycrystalline aluminium nitride AlN film after the diffusing.

Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Abstract: A method for producing a resistive memory cell from a stack of layers having a metal-oxide layer interleaved between first and second electrodes includes forming, within one from among the first and second electrodes, an interlayer material-based electrode interlayer having a selectivity to etching greater than or equal to 2:1 relative to materials of the electrodes. During an etching of the stack, overetching is performed configured to laterally consume, in a horizontal direction, the interlayer material such that the electrode interlayer has a lateral recess greater than or equal to 10 nm.

Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ?Gf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ?Gf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ?Gf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ?Gf,T0 (M2NO): ?Gf,T0(M3M4O)<?Gf,T0(M1Oss)??Gf,T0(M2NO) or ?Gf,T0(M3M4NO)<?Gf,T0(M1Oss)??Gf,T0(M2NO).

Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Abstract: Devices, systems, and methods for HFCWO oscillation therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition to a chest engagement device to provide HFCWO.

Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode.

Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.

Abstract: An insulating support (20) for insulating an electrical conductor contained in aligned casing portions (34, 35), is held in a housing (39) defined by the flanges (36, 37) for joining the casing portions (34, 35) together, the flanges presenting contact faces (38) around the periphery (24) of the support (20). A single sealing gasket (41) is sufficient to prevent the atmosphere in the casing leaking to the outside, and that simplifies assembly of the electrical equipment, while at the same time protecting the support (20) from the outside. For application to medium- and high-voltage electrical equipment.