Abstract: This disclosure relates to devices and methods that can increase the efficiency of patient support apparatus. A connecting device comprises an insert component that is configured to be insertable into a sleeve component. The sleeve component comprises a sleeve surface wall enclosing a sleeve open space extending from a first sleeve end to a second sleeve end and including a sleeve receiving cap on the second sleeve end with a first access port. The insert component comprises an insert surface wall enclosing an insert open space extending from a first insert end to a second insert end and including an insert receiving cap on the first insert end with a second access port. The sleeve component is attached to the insert component by a connector passing through the first and second access ports.

Abstract: A sling for supporting a subject is disclosed herein. The sling includes a body, one or more loops extending from the body, a first fastener coupled to a first portion of the body, and a second fastener coupled to a second portion of the body. The first fastener and the second fastener cooperate to enclose the one or more loops by selectively securing the first portion of the body to the second portion of the body in a folded configuration.

Abstract: Devices, systems, and methods for high frequency chest wall oscillation (HFCWO) therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition by a chest engagement device to provide HFCWO.

Abstract: Devices, systems, and methods for HFCWO oscillation therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition to a chest engagement device to provide HFCWO.

Abstract: A method for manufacturing a crystal layer includes using a substrate having a surface film made of a dichalcogenide of a transition metal, designated MX2, where “M” denotes a transition metal and “X” denotes a chalcogen, the surface film including a set of monolayers bonded together by van der Waals bonds; forming a polycrystalline aluminium nitride AlN film, having grain boundaries, on the surface film; and diffusing metal elements into the surface film, through the grain boundaries of the polycrystalline aluminium nitride AlN film, the metal elements being chosen to react chemically with MX2 by a redox reaction so as to convert the van der Waals bonds into covalent bonds, A crystalline layer is formed on the polycrystalline aluminium nitride AlN film after the diffusing.

Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Abstract: A method for producing a resistive memory cell from a stack of layers having a metal-oxide layer interleaved between first and second electrodes includes forming, within one from among the first and second electrodes, an interlayer material-based electrode interlayer having a selectivity to etching greater than or equal to 2:1 relative to materials of the electrodes. During an etching of the stack, overetching is performed configured to laterally consume, in a horizontal direction, the interlayer material such that the electrode interlayer has a lateral recess greater than or equal to 10 nm.

Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ?Gf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ?Gf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ?Gf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ?Gf,T0 (M2NO): ?Gf,T0(M3M4O)<?Gf,T0(M1Oss)??Gf,T0(M2NO) or ?Gf,T0(M3M4NO)<?Gf,T0(M1Oss)??Gf,T0(M2NO).

Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Abstract: A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Abstract: Devices, systems, and methods for HFCWO oscillation therapy can enhance expectoration by preferred impact to the user to encourage mucus dislodging, including by successive pressure imposition to a chest engagement device to provide HFCWO.

Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode.

Abstract: A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.

Abstract: An insulating support (20) for insulating an electrical conductor contained in aligned casing portions (34, 35), is held in a housing (39) defined by the flanges (36, 37) for joining the casing portions (34, 35) together, the flanges presenting contact faces (38) around the periphery (24) of the support (20). A single sealing gasket (41) is sufficient to prevent the atmosphere in the casing leaking to the outside, and that simplifies assembly of the electrical equipment, while at the same time protecting the support (20) from the outside. For application to medium- and high-voltage electrical equipment.

Abstract: A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.

Abstract: An insulating support (20) for insulating an electrical conductor contained in aligned casing portions (34, 35), is held in a housing (39) defined by the flanges (36, 37) for joining the casing portions (34, 35) together, the flanges presenting contact faces (38) around the periphery (24) of the support (20). A single sealing gasket (41) is sufficient to prevent the atmosphere in the casing leaking to the outside, and that simplifies assembly of the electrical equipment, while at the same time protecting the support (20) from the outside. For application to medium- and high-voltage electrical equipment.

Abstract: The bend of the invention makes it possible to provide a great number of different direction changes in the configuration of gas-insulated high-voltage lines. The bend mainly uses an angled ferrule (11). associated with two angular rings (12), placed between the angled ferrule (11) and a straight section (13) of the line, each angular ring (12) forming a change of direction defined by a determined angular offset angle (?) between said two joining surfaces. Thus, the use of an angled ferrule (11), in combination with one or two angular rings (12) makes it possible to obtain the four angular offsets of 70°, 80°, 100°, 110°. These same angular rings (12), used with an angled ferrule having an angle of 140° makes it possible to obtain the angles of 120°, 130°, 150°, and 160°. Use for constructing gas-insulated high-voltage lines.