Patents by Inventor Mathieu Boccard

Mathieu Boccard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CdTe-based double heterostructures and related light-conversion devices
    Patent number: 10396232
    Abstract: Devices converting light to electricity (such as solar cells or photodetectors) including a heavily-doped p-type a-SiCy:H and an i-MgxCd1-xTe/n-CdTe/N—Mg0.24Cd0.76Te double heterostructure (DH), with power conversion efficiency of as high as 17%, Voc as high as 1.096 V, and all operational characteristics being substantially better than those of monocrystalline solar cells known to-date. The a-SiCy:H layer is configured to enable high built-in potential while, at the same time, allowing the doped absorber to maintain a very long carry lifetime. In comparison, similar undoped CdTe/MgxCd1-xTe DH designs reveal a long carrier lifetime of 3.6 ?s and an interface recommendation velocity of 1.2 cm/s, which are lower than the record values reported for GaAs/Al0.5Ga0.5As (18 cm/s) and GaAs/Ga0.5In0.5P (1.5 cm/s) DHs.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: August 27, 2019
    Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
    Inventors: Yong-Hang Zhang, Mathieu Boccard, Zachary Holman, Yuan Zhao
  • CDTE-BASED DOUBLE HETEROSTRUCTURES AND RELATED LIGHT-CONVERSION DEVICES
    Publication number: 20190109252
    Abstract: Devices converting light to electricity (such as solar cells or photodetectors) including a heavily-doped p-type a-SiCy:H and an i-MgxCd1?xTe/n-CdTe/N—Mg0.24Cd0.76Te double heterostructure (DH), with power conversion efficiency of as high as 17%, Voc as high as 1.096 V, and all operational characteristics being substantially better than those of monocrystalline solar cells known to-date. The a-SiCy:H layer is configured to enable high built-in potential while, at the same time, allowing the doped absorber to maintain a very long carry lifetime. In comparison, similar undoped CdTe/MgxCd1?xTe DH designs reveal a long carrier lifetime of 3.6 ?s and an interface recommendation velocity of 1.2 cm/s, which are lower than the record values reported for GaAs/Al0.5Ga0.5As (18 cm/s) and GaAs/Ga0.5In0.5P (1.5 cm/s) DHs.
    Type: Application
    Filed: March 29, 2017
    Publication date: April 11, 2019
    Inventors: Yong-Hang Zhang, Mathieu Boccard, Zachary Holman, Yuan Zhao