Abstract: A device for measuring the power and wavelength of laser radiation via the photoacoustic effect, includes a cell containing at least one gas having an absorption line with a central wavelength ?c, an electro-acoustic transducer arranged within the cell and suitable for generating a signal representative of the photoacoustic signal in the cell, means for processing the signal generated by the electro-acoustic transducer, wherein an estimate of the concentration of the one or more gases is stored, at least one laser source suitable for emitting, into the cell, laser radiation at a wavelength suitable for exciting at least one gas contained in the cell, the laser radiation having a wavelength that is variable in an oscillatory manner about an average wavelength ?moy at a modulation frequency (f1), such that an interaction between the laser radiation and at least one gas contained in the cell induces generation of a photoacoustic signal at a detection frequency of the electro-acoustic transducer, the cell being s

Abstract: A photo-acoustic gas sensor using a method for modulating the wavelength of the laser radiation, the modulation being obtained via judicious use of an electric current, called the generation current, which pumps the one or more laser sources, and is configured to cause the one or more laser sources to operate in pulsed mode, and of a current, called the base current, which takes non-zero values between each laser pulse with a lower magnitude than the magnitude of the generation current, the magnitude of base current being modulated so that the one or more laser sources emit, into the cell, light radiation having a wavelength that varies periodically about a central wavelength so as to take, at regular intervals, a value specifically suitable for the excitation of a gas to be detected, whereby an interaction between the light radiation and the gas to be detected contained in the cell induces the generation of acoustic waves at a resonant frequency of the cell.

Abstract: A photo-acoustic gas sensor using a method for modulating the wavelength of the laser radiation, the modulation being obtained via judicious use of an electric current, called the generation current, which pumps the one or more laser sources, and is configured to cause the one or more laser sources to operate in pulsed mode, and of a current, called the base current, which takes non-zero values between each laser pulse with a lower magnitude than the magnitude of the generation current, the magnitude of base current being modulated so that the one or more laser sources emit, into the cell, light radiation having a wavelength that varies periodically about a central wavelength so as to take, at regular intervals, a value specifically suitable for the excitation of a gas to be detected, whereby an interaction between the light radiation and the gas to be detected contained in the cell induces the generation of acoustic waves at a resonant frequency of the cell.

Abstract: A laser includes a network of micro-ridges of quantum cascade lasers of preset emission wavelength, the micro-ridges, which are of preset widths, forming active zones of refractive index nza that are spaced apart from each other by an inter-ridge material of refractive index ne, with nza<ne. The inter-ridge material is a group-IV material is also provided.

Abstract: A reproducible method for producing a resonant structure of a distributed-feedback semiconductor laser exhibiting a narrow waveguide of the order of some ten micrometers, the production of the diffraction grating being carried out subsequent to the step of producing the strip is provided. In a last step, a diffraction grating is engraved as a function of a desired precise wavelength.

Abstract: A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.

Abstract: A photoacoustic detection device including a nanophotonic circuit including a plurality of semiconductor lasers capable of emitting a different frequencies; input couplers connected to optical waveguides; a multiplexer; an output optical waveguide, emerging into a recess; a tuning fork having its free arms arranged at the output of the output optical waveguide; and means for detecting the vibration of the tuning fork, all these elements being assembled in a monolithic component.

Abstract: The invention relates to a quantum cascade device of detector type comprising two electrodes for applying a control electrical field, and a waveguide positioned between the two electrodes, said device comprising a gain region made up of a plurality of layers and comprising alternating strata of a first type each defining a quantum barrier and strata of a second type each defining a quantum well, each layer of the gain region comprising an injection barrier exhibiting an injection subband of charge carriers with a lower energy level called injector level (i) and an active area, said active area being made of a set of pairs of strata made from semiconductive materials so that each of the wells has at least one upper subband called third subband (3), a middle subband called second subband (2) and a bottom subband called first subband (1), the potential difference between the third and second subbands being such that the transition of an electron from the third subband to the second subband emits an energy corres

Abstract: The invention relates to a method of fabricating an optical device for analysing a scene, comprising an emitter and a detector in the mid-infrared or far-infrared, characterized in that it comprises: the production of a stack of semiconductor layers grown epitaxially on the surface of a semiconductor substrate, certain layers of which are doped; the production of a first, quantum cascade laser emission device (L) emitting an analysis beam in the mid-infrared or far-infrared, from a first level called the emission level, into the stack of semiconductor layers; and the production of a second, quantum detector device (D) capable of detecting a beam backscattered by the scene to be analysed, at the same level in the stack as the emission level.

Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.

Abstract: An optical structure enabling properties of the surface plasmons to be used is defined from a substantially binary, parameterizable unit pattern ME. The parameters a, b, c, d and hg of the pattern are chosen so as to maximize the complex amplitudes of the first two harmonics of the complex Fourier series describing the pattern ME. This structure is advantageously used in combination with a photodetector, an infrared or Terahertz optical wave emitter, or a field emission device.

Abstract: The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area.

Abstract: The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (?), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [ ? 4 × neff ] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.

Abstract: The present invention relates to the field of distributed feedback semiconductor lasers. More specifically, the invention makes it possible to develop single-mode distributed feedback lasers with a production rate close to 100% using a simple and robust technology. To this end, the invention involves introducing radiative losses on just one of the two predominant modes of a DFB laser obtained by index modulation by defining a particular refractive index profile of the active area.

Abstract: The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (?), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) is [ ? 4 × neff ] plus or minus 50%, the low precision needed being one of the advantages of the inventive laser.

Abstract: An optical structure enabling properties of the surface plasmons to be used is defined from a substantially binary, parameterizable unit pattern ME. The parameters a, b, c, d and hg of the pattern are chosen so as to maximize the complex amplitudes of the first two harmonics of the complex Fourier series describing the pattern ME. This structure is advantageously used in combination with a photodetector, an infrared or Terahertz optical wave emitter, or a field emission device.

Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.