Abstract: An oscillator circuit comprising at least a first component arranged to be statically calibrated to calibrate the oscillator circuit to achieve a symmetrical frequency/temperature profile for the oscillator circuit. The oscillator circuit further comprises at least one further component arranged to be dynamically calibrated to enable an oscillating frequency of the oscillator circuit to be dynamically adjusted, and at least one temperature compensation component arranged to receive at least one temperature indication for the oscillator circuit and to dynamically adjust the at least one further component based at least partly on the at least one received temperature indication. In some examples, the at least one temperature compensation component is arranged to dynamically adjust the at least one further component based on a standardized temperature compensation scheme.

Abstract: A semiconductor device, comprising a substrate and an electronic circuit formed thereon is described. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor, which comprises a sensing line for sensing the potential at a charge collecting region; a supply node; and a current source connected between the supply node and the charge collecting region. The current source is arranged to inject a stationary current into the charge collecting region when the potential at the charge collecting region is below the supply potential. The sensing line comprises a monoflop, which is arranged to assume an unstable state when the potential at its input has exceeded a threshold and to return to a stable state when the potential at its input has remained below the threshold for at least a time period.

Abstract: A semiconductor device comprising a substrate and an electronic circuit thereon is described. The electronic circuit comprises a first voltage provider node, a second voltage provider node, and an intermediary node connected to the first and second voltage provider node by a first and second network with a first and second resistance, respectively. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor. The first network is arranged to reduce the first resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. Similarly, the second network is arranged to reduce the second resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. A method of operating a semiconductor device is also disclosed.