Patents by Inventor Mathieu Senes

Mathieu Senes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor light-emitting element
    Patent number: 9318645
    Abstract: A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: April 19, 2016
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Yoshihiko Tani, Tadashi Takeoka, Akihiro Kurisu, Tetsuya Hanamoto, Mathieu Senes
  • NITRIDE LED STRUCTURE WITH DOUBLE GRADED ELECTRON BLOCKING LAYER
    Publication number: 20150179881
    Abstract: A group III nitride-based light emitting device includes an n-type semiconductor layer; a first p-type semiconductor layer; an active region; and an electron blocking region comprising AlGaInN located between the active region and the first p-type semiconductor layer, and including at least an upgraded layer and a downgraded layer. An aluminium composition of the upgraded layer of the electron blocking region increases from an active region side to a first p-type semiconductor layer side of the electron blocking region, and an aluminium composition of the downgraded layer of the electron blocking region decreases from the active region side to the first p-type semiconductor layer side of the electron blocking region. The nitride-based light emitting device may be a light emitting diode or a laser diode.
    Type: Application
    Filed: December 24, 2013
    Publication date: June 25, 2015
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Mathieu Sénès, Tadashi Takeoka
  • NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    Publication number: 20150076447
    Abstract: A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.
    Type: Application
    Filed: October 16, 2013
    Publication date: March 19, 2015
    Inventors: Yoshihiko Tani, Tadashi Takeoka, Akihiro Kurisu, Tetsuya Hanamoto, Mathieu Senes