Patents by Inventor Matias Velazquez

Matias Velazquez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9945049
    Abstract: The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in particular in the optical field.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: April 17, 2018
    Assignee: CENTRE NATIONAL DE LA RECHERCHE SCINTIFIQI
    Inventors: Philippe Veber, Matias Velazquez, Oudomsack Viraphong, Gabriel Buse
  • Publication number: 20160160383
    Abstract: The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in particular in the optical field.
    Type: Application
    Filed: July 23, 2014
    Publication date: June 9, 2016
    Inventors: Philippe Veber, Matias Velazquez, Oudomsack Viraphong, Gabriel Buse
  • Patent number: 9187845
    Abstract: A method is provided for preparing solid or thin-film single-crystals of cubic sesquioxides (space group no. 206, Ia-3) of scandium, yttrium or rare earth elements doped with lanthanide ions with valence +III, using a high-temperature flux growth technique, and to the various uses of the single-crystals obtained according to said method, in particular in the field of optics.
    Type: Grant
    Filed: November 3, 2010
    Date of Patent: November 17, 2015
    Assignee: Centre National De La Recherche Scientifique
    Inventors: Philippe Veber, Matias Velazquez, Jean-Pierre Chaminade, Oudomsack Viraphong
  • Publication number: 20120273713
    Abstract: A method is provided for preparing solid or thin-film single-crystals of cubic sesquioxides (space group no. 206, Ia-3) of scandium, yttrium or rare earth elements doped with lanthanide ions with valence +III, using a high-temperature flux growth technique, and to the various uses of the single-crystals obtained according to said method, in particular in the field of optics.
    Type: Application
    Filed: November 3, 2010
    Publication date: November 1, 2012
    Inventors: Philippe Veber, Matias Velazquez, Jean-Pierre Chaminade, Oudomsack Viraphong