Abstract: A bonding pad structure for a semiconductor integrated circuit permits miniaturization of the bonding pad size by utilizing an opening in an overlying insulating layer to an exposed surface of an underlying multi-layer, interconnecting wiring of the integrated circuit, constituting a bonding pad for exposure to wire bonding. As a result, miniaturization of bonding pad size can be accommodated with integrated circuit scale reduction while maintaining good bonding adhesion strength at the bonding pad for subsequent wiring bonding.

Abstract: A semiconductor device comprises at least one p-type and n-type LDD transistors in a pair and a standard (non-LDD) transistor in the same substrate. Appropriate p-wells and n-wells are formed in the substrate, gate electrodes deposited, p-type and n-type first diffusions made, a silicon nitride layer is deposited and removed to leave behind sidewalls on the gates, p-type and n-type second diffusions are made in the LDD transistors, the silicon nitride sidewalls are washed away with a solvent that attacks only the silicon nitride, a third diffusion is made in the standard (non-LDD) transistor(s), a phosphosilicate glass (PSG) layer is applied, contact holes are etched, and an aluminum metalization layer is applied and etched for the interconnect.

Abstract: The infiltration of an impurity, such as phosphorus or boron, from a lower layer or interconnect into a higher layer or interconnect can be prevented without sacrificing the established high resistance characteristics of a formed high resistance region in the latter through the employment of a thin nitride film of an appropriate material and thickness positioned at the interface between the lower layer and the high resistance region. This technique minimizes any detrimental shortening of the high resistance region formed in such a layer or interconnect making it suitable for increased density and higher levels of integration of semiconductor devices.

Abstract: An MIS type semiconductor integrated circuit device, composed of: a semiconductor substrate of a first conductivity type provided with spaced source and drain regions of a second conductivity type; a gate insulated film formed on the semiconductor substrate; a film of polycrystalline silicon formed on the gate insulation film; a gate electrode composed of a film of a refractory metal formed on the polycrystalline silicon film; and a film of a refractory metal silicide formed on the exposed surfaces of the gate electrode; wherein the source and drain regions are formed in the semiconductor substrate on both sides of the gate electrode on which the refractory metal silicide film is formed.

Abstract: A semiconductor device including a MOS field effect transistor formed on a single silicon crystal substrate having source and drain diffused regions of reduced depth. In order to avoid penetration of aluminum from the aluminum connector through the diffused region into the substrate, the diffused region is formed by double diffusion of at least two types of impurities of the same conductive type, but having different diffusion coefficients with respect to each other.

Abstract: An auxiliary automotive headlight intended to secure the visual range in fog, rain, and snow. The filament of the lamp bulb is placed horizontally at the focus of a reflector in the shape of a paraboloid of revolution. At the front of the reflector there is provided a diffuser lens to diffuse the light in the horizontal direction. The diffuser lens has refracting parts which are thicker upwardly so that the light is diffused partially in the vertical direction as well as in the horizontal direction. These refracting parts are arranged according to the light distribution pattern or reflection at the upper part, lower part, diagonally left lower part, and diagonally right lower part around the filament. The refracting part formed according to the lower light distribution pattern has a higher refractive index in the vertical direction than the other parts and a lower refractive index in the horizontal direction than the others.