Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-cladding layer, and a buried layer in which two sides of the multilayer structured are buried using a semi-insulating semiconductor crystal. The buried layer includes a diffusion enhancement layer which is adjacent to the mesa-stripe-like multilayer structure and enhances diffusion of a p-impurity, and a diffusion suppression layer which is adjacent to the diffusion enhancement layer and suppresses diffusion of a p-impurity. A method of manufacturing a semiconductor optical device is also disclosed.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.

Abstract: A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure.

Abstract: A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-cladding layer, and a buried layer in which two sides of the multilayer structured are buried using a semi-insulating semiconductor crystal. The buried layer includes a diffusion enhancement layer which is adjacent to the mesa-stripe-like multilayer structure and enhances diffusion of a p-impurity, and a diffusion suppression layer which is adjacent to the diffusion enhancement layer and suppresses diffusion of a p-impurity. A method of manufacturing a semiconductor optical device is also disclosed.

Abstract: A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

Abstract: A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.