Abstract: An electronic device may include a first electrode, a first piezoelectric layer electrically coupled to the first electrode, a first magnetostrictive layer above the first piezoelectric layer, a first tunnel barrier layer above the first magnetostrictive layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer a second tunnel barrier layer above the ferromagnetic layer, a second magnetostrictive layer above the second tunnel barrier layer, a second piezoelectric layer above the second magnetostrictive layer, and a third electrode electrically coupled to the second piezoelectric layer. The first piezoelectric layer may be strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer may be strained responsive to voltage applied across the second and third electrodes.

Abstract: A method comprising: forming a polyimide layer; forming a thin film resistor on the polyimide layer; forming, on the thin film resistor and the polyimide layer, a metallization layer that includes metal contacts on opposing ends of the thin film resistor but leaves an exposed surface of the polyimide layer; baking the polyimide layer, the thin film resistor, and the metallization layer to remove water from the polyimide layer; forming, on the exposed surface of the polyimide layer, a hydrophobic moisture barrier layer that prevents absorption of water into the polyimide layer to avoid blistering of the thin film resistor during subsequent laser trimming of the thin film resistor; and laser trimming a resistance of the thin film resistor between the metal contacts.

Abstract: An electronic device may include a first electrode, a first magnetostrictive layer coupled to the first electrode, a plurality of alternating ferromagnetic and insulating layers stacked above the first magnetostrictive layer, a second electrode electrically coupled to an intermediate ferromagnetic layer in the stack of ferromagnetic and insulating layers, a second magnetostrictive layer above the stack of ferromagnetic and insulating layers, and a third electrode electrically coupled to the second magnetostrictive layer. At least one ferromagnetic layer below the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a first voltage applied across the first and second electrodes, and at least one ferromagnetic layer above the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a second voltage applied across the second and third electrodes.

Abstract: An electronic device may include an IC, a grid array substrate, and a multi-level interposer coupled between the IC and the grid array substrate. The multi-level interposer may have dielectric layers, and a sequence of metal levels carried by respective dielectric layers, and an RF sloped via including a sloped metal signal layer extending from a first metal level, through a second metal level, and to a third metal level, and a respective sloped lateral metal ground layer adjacent each side of the sloped metal signal layer.

Abstract: An electronic device may include an IC, a grid array substrate, and a multi-level interposer coupled between the IC and the grid array substrate. The multi-level interposer may have dielectric layers, and a sequence of metal levels carried by respective dielectric layers, and an RF sloped via including a sloped metal signal layer extending from a first metal level, through a second metal level, and to a third metal level, and a respective sloped lateral metal ground layer adjacent each side of the sloped metal signal layer.

Abstract: An electronic device may include a first electrode, a first piezoelectric layer electrically coupled to the first electrode, a first magnetostrictive layer above the first piezoelectric layer, a first tunnel barrier layer above the first magnetostrictive layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer a second tunnel barrier layer above the ferromagnetic layer, a second magnetostrictive layer above the second tunnel barrier layer, a second piezoelectric layer above the second magnetostrictive layer, and a third electrode electrically coupled to the second piezoelectric layer. The first piezoelectric layer may be strained responsive to voltage applied across the first and second electrodes, and the second piezoelectric layer may be strained responsive to voltage applied across the second and third electrodes.

Abstract: An electronic device may include a first electrode, a first magnetostrictive layer coupled to the first electrode, a plurality of alternating ferromagnetic and insulating layers stacked above the first magnetostrictive layer, a second electrode electrically coupled to an intermediate ferromagnetic layer in the stack of ferromagnetic and insulating layers, a second magnetostrictive layer above the stack of ferromagnetic and insulating layers, and a third electrode electrically coupled to the second magnetostrictive layer. At least one ferromagnetic layer below the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a first voltage applied across the first and second electrodes, and at least one ferromagnetic layer above the intermediate ferromagnetic layer may be switchable between different polarization states responsive to a second voltage applied across the second and third electrodes.

Abstract: An electronic device may include a first electrode, a first magnetostrictive layer electrically coupled to the first electrode, a first ferroelectric layer above the first ferromagnetic layer, and a ferromagnetic layer above the first ferroelectric layer. The electronic device may further include a second electrode electrically coupled to the ferromagnetic layer, a second ferroelectric layer above the ferromagnetic layer, a second magnetostrictive layer above the second ferroelectric layer, and a third electrode electrically coupled to the second magnetostrictive layer. The first ferroelectric layer may be switchable between different polarization states responsive to a first voltage applied across the first and second electrodes, and the second ferroelectric layer may be switchable between different polarization states responsive to a second voltage applied across the second and third electrodes.

Abstract: A veneer composer is provided including a skew correcting station adapted to square at least one edge of a veneer piece to a first or reference side, a clipping station adapted to move in the same direction and at the same material being clipped, and a gap closing station adapted to close the gap between adjacent veneer pieces without causing excessive force between the adjacent edges.

Abstract: A veneer composer is provided including a skew correcting station adapted to square at least one edge of a veneer piece to a reference side, a clipping station adapted to move in the same direction and at the same material being clipped, and a gap closing station adapted to close the gap between adjacent veneer pieces without causing excessive force between the adjacent edges.

Abstract: A veneer composer is provided including a skew correcting station adapted to square at least one edge of a veneer piece to a reference side, a clipping station adapted to move in the same direction and at the same material being clipped, and a gap closing station adapted to close the gap between adjacent veneer pieces without causing excessive force between the adjacent edges.