Patents by Inventor Matt Hankinson
Matt Hankinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7767956Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: December 4, 2008Date of Patent: August 3, 2010Assignee: KLA-Tencor Technologies Corp.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
-
Publication number: 20090079974Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: December 4, 2008Publication date: March 26, 2009Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
-
Patent number: 7462814Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: February 1, 2006Date of Patent: December 9, 2008Assignee: KLA-Tencor Technologies Corp.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
-
Patent number: 7352453Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: GrantFiled: January 17, 2004Date of Patent: April 1, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Chris A. Mack, Matt Hankinson
-
Publication number: 20060138366Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: February 1, 2006Publication date: June 29, 2006Inventors: Suresh Lakkapragada, Kyle Brown, Matt Hankinson, Ady Levy
-
Patent number: 6987572Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: February 14, 2003Date of Patent: January 17, 2006Assignee: KLA-Tencor Technologies Corp.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
-
Publication number: 20040190008Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: ApplicationFiled: January 17, 2004Publication date: September 30, 2004Applicant: KLA-Tencor CorporationInventors: Walter D. Mieher, Chris A. Mack, Matt Hankinson
-
Patent number: 6689519Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: May 4, 2001Date of Patent: February 10, 2004Assignee: KLA-Tencor Technologies Corp.Inventors: Kyle A. Brown, Matt Hankinson, Ady Levy, Suresh Lakkapragada
-
Publication number: 20040005507Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: March 27, 2003Publication date: January 8, 2004Applicant: KLA-Tencor, Inc.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy, Ibrahim Abdul-Halim
-
Patent number: 6673638Abstract: A method for controlling the variation in process parameters using test structures sensitized to process parameter changes. Wavefront engineering techniques are used to make features of the test structure more sensitive to process changes. Focus and exposure parameters are adjusted in response to the measurements of the test structures. In another embodiment, the wavefront engineering features are placed to permit the test structure appearing on the reticle out of focus. The wavefront engineering feature is an OPC technique applied to the test structure to modify it. The OPC features are applied in an asymmetrical manner to the test structure and enable identifying the direction of process focus changes.Type: GrantFiled: January 28, 2002Date of Patent: January 6, 2004Assignee: KLA-Tencor CorporationInventors: Joseph J. Bendik, Matt Hankinson
-
Publication number: 20030148198Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: February 14, 2003Publication date: August 7, 2003Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
-
Publication number: 20020072001Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: May 4, 2001Publication date: June 13, 2002Inventors: Kyle A. Brown, Matt Hankinson, Ady Levy, Suresh Lakkapragada