Patents by Inventor Matt N. McCain

Matt N. McCain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POWER SEMICONDUCTOR DEVICES INCLUDING A TRENCHED GATE AND METHODS OF FORMING SUCH DEVICES
    Publication number: 20230231047
    Abstract: Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and a gate electrode in the trench and on the dielectric layer opposite the semiconductor layer structure. The trench may include rounded upper corner and a rounded lower corner. A center portion of a top surface of the dielectric layer may be curved, and the dielectric layer may be on opposed sidewalls of the trench. The dielectric layer may include a bottom dielectric layer on a bottom surface of the trench and on lower portions of the sidewalls of the trench and a gate dielectric layer on upper portions of the sidewalls of the trench and on the bottom dielectric layer.
    Type: Application
    Filed: March 24, 2023
    Publication date: July 20, 2023
    Inventors: Daniel Lichtenwalner, Sei-Hyung Ryu, Naeem Islam, Woongsun Kim, Matt N. McCain, Joe McPherson
  • Power semiconductor devices including a trenched gate and methods of forming such devices
    Patent number: 11640990
    Abstract: Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and a gate electrode in the trench and on the dielectric layer opposite the semiconductor layer structure. The trench may include rounded upper corner and a rounded lower corner. A center portion of a top surface of the dielectric layer may be curved, and the dielectric layer may be on opposed sidewalls of the trench. The dielectric layer may include a bottom dielectric layer on a bottom surface of the trench and on lower portions of the sidewalls of the trench and a gate dielectric layer on upper portions of the sidewalls of the trench and on the bottom dielectric layer.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: May 2, 2023
    Assignee: Wolfspeed, Inc.
    Inventors: Daniel Lichtenwalner, Sei-Hyung Ryu, Naeem Islam, Woongsun Kim, Matt N. McCain, Joe McPherson
  • POWER SEMICONDUCTOR DEVICES INCLUDING A TRENCHED GATE AND METHODS OF FORMING SUCH DEVICES
    Publication number: 20220130995
    Abstract: Semiconductor devices and methods of forming the devices are provided. Semiconductor devices include a semiconductor layer structure comprising a trench in an upper surface thereof, a dielectric layer in a lower portion of the trench, and a gate electrode in the trench and on the dielectric layer opposite the semiconductor layer structure. The trench may include rounded upper corner and a rounded lower corner. A center portion of a top surface of the dielectric layer may be curved, and the dielectric layer may be on opposed sidewalls of the trench. The dielectric layer may include a bottom dielectric layer on a bottom surface of the trench and on lower portions of the sidewalls of the trench and a gate dielectric layer on upper portions of the sidewalls of the trench and on the bottom dielectric layer.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Inventors: Daniel Lichtenwalner, Sei-Hyung Ryu, Naeem Islam, Woongsun Kim, Matt N. McCain, Joe McPherson
  • Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices
    Patent number: 11222955
    Abstract: A semiconductor device includes a semiconductor layer structure that includes silicon carbide, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. In some embodiments, a periphery of a portion of the gate dielectric layer that underlies the gate electrode is thicker than a central portion of the gate dielectric layer, and a lower surface of the gate electrode has recessed outer edges such as rounded and/or beveled outer edges.
    Type: Grant
    Filed: April 22, 2020
    Date of Patent: January 11, 2022
    Assignee: Wolfspeed, Inc.
    Inventors: Daniel Jenner Lichtenwalner, Brett Hull, Edward Robert Van Brunt, Shadi Sabri, Matt N. McCain
  • SEMICONDUCTOR POWER DEVICES HAVING GATE DIELECTRIC LAYERS WITH IMPROVED BREAKDOWN CHARACTERISTICS AND METHODS OF FORMING SUCH DEVICES
    Publication number: 20210336021
    Abstract: A semiconductor device includes a semiconductor layer structure that includes silicon carbide, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. In some embodiments, a periphery of a portion of the gate dielectric layer that underlies the gate electrode is thicker than a central portion of the gate dielectric layer, and a lower surface of the gate electrode has recessed outer edges such as rounded and/or beveled outer edges.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 28, 2021
    Inventors: Daniel Jenner Lichtenwalner, Brett Hull, Edward Robert Van Brunt, Shadi Sabri, Matt N. McCain