Patents by Inventor Matt Nowak

Matt Nowak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell
    Patent number: 7919794
    Abstract: A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.
    Type: Grant
    Filed: January 8, 2008
    Date of Patent: April 5, 2011
    Assignee: QUALCOMM, Incorporated
    Inventors: Shiqun Gu, Seung H. Kang, Matt Nowak