Patents by Inventor Matt Prince

Matt Prince has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Facilitating removal of sacrificial layers via implantation to form replacement metal gates
    Patent number: 7422936
    Abstract: Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. A hard mask may also be applied over the gate structure and implanted so that the hard mask may be more readily removed.
    Type: Grant
    Filed: August 25, 2004
    Date of Patent: September 9, 2008
    Assignee: Intel Corporation
    Inventors: Chris E. Barns, Matt Prince, Mark L. Doczy, Justin K. Brask, Jack Kavalieros
  • Facilitating removal of sacrificial layers to form replacement metal gates
    Publication number: 20060046523
    Abstract: Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. In one embodiment, the interlayer dielectric has a lower polish rate than that of oxide.
    Type: Application
    Filed: August 25, 2004
    Publication date: March 2, 2006
    Inventors: Jack Kavalieros, Justin Brask, Mark Doczy, Chris Barns, Matthew Metz, Suman Datta, Robert Chau, Matt Prince, Anne Miller, Mark Buehler
  • Facilitating removal of sacrificial layers via implantation to form replacement metal gates
    Publication number: 20060046448
    Abstract: Replacement metal gates may be formed by removing a polysilicon layer from a gate structure. The gate structure may be formed by patterning the polysilicon layer and depositing a spacer layer over the gate structure such that the spacer layer has a first polish rate. The spacer layer is then etched to form a sidewall spacer. An interlayer dielectric is applied over the gate structure with the sidewall spacer. The interlayer dielectric has a second polish rate higher than the first polish rate. A hard mask may also be applied over the gate structure and implanted so that the hard mask may be more readily removed.
    Type: Application
    Filed: August 25, 2004
    Publication date: March 2, 2006
    Inventors: Chris Barns, Matt Prince, Mark Doczy, Justin Brask, Jack Kavalieros